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IXXH75N60C3D1

IXXH75N60C3D1 IXYS


littelfuse_discrete_igbts_xpt_ixxh75n60c3d1_datasheet.pdf.pdf Hersteller: IXYS
Description: IGBT 600V 150A 750W TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: PT
Td (on/off) @ 25°C: 35ns/90ns
Switching Energy: 1.6mJ (on), 800µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 107 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 750 W
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Technische Details IXXH75N60C3D1 IXYS

Description: IGBT 600V 150A 750W TO247, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 25 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A, Supplier Device Package: TO-247AD, IGBT Type: PT, Td (on/off) @ 25°C: 35ns/90ns, Switching Energy: 1.6mJ (on), 800µJ (off), Test Condition: 400V, 60A, 5Ohm, 15V, Gate Charge: 107 nC, Part Status: Active, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 750 W.

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IXXH75N60C3D1 IXXH75N60C3D1 Hersteller : IXYS IXXH75N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 185ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXH75N60C3D1 IXXH75N60C3D1 Hersteller : IXYS media-3322753.pdf IGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXXH75N60C3D1 IXXH75N60C3D1 Hersteller : IXYS IXXH75N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 185ns
Produkt ist nicht verfügbar