IXXH80N65B4D1 IXYS
Hersteller: IXYSDescription: DISC IGBT XPT-GENX4 TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 26ns/112ns
Switching Energy: 3.36mJ (on), 1.83mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 180 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 18.37 EUR |
| 30+ | 14.87 EUR |
| 120+ | 13.99 EUR |
| 510+ | 12.68 EUR |
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Technische Details IXXH80N65B4D1 IXYS
Description: DISC IGBT XPT-GENX4 TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 100 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 80A, Supplier Device Package: TO-247AD (IXXH), IGBT Type: PT, Td (on/off) @ 25°C: 26ns/112ns, Switching Energy: 3.36mJ (on), 1.83mJ (off), Test Condition: 400V, 80A, 3Ohm, 15V, Gate Charge: 120 nC, Part Status: Active, Current - Collector (Ic) (Max): 180 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 430 A, Power - Max: 625 W.
Weitere Produktangebote IXXH80N65B4D1
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Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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IXXH80N65B4D1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 625W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 430A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 125ns Turn-off time: 222ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXXH80N65B4D1 | Hersteller : IXYS |
IGBT Transistors Disc IGBT XPT-GenX4 TO-247AD |
Produkt ist nicht verfügbar |
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IXXH80N65B4D1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 625W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 430A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 125ns Turn-off time: 222ns |
Produkt ist nicht verfügbar |