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IXXH80N65B4H1

IXXH80N65B4H1 IXYS

ds100528c%28ixxh80n65b4h1%29.pdf
Hersteller: IXYS
Description: IGBT PT 650V 160A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/120ns
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
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Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+28.27 EUR
30+17.31 EUR
120+14.91 EUR
510+13.85 EUR
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Technische Details IXXH80N65B4H1 IXYS

Description: IGBT PT 650V 160A TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 150 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A, Supplier Device Package: TO-247AD (IXXH), IGBT Type: PT, Td (on/off) @ 25°C: 38ns/120ns, Switching Energy: 3.77mJ (on), 1.2mJ (off), Test Condition: 400V, 80A, 3Ohm, 15V, Gate Charge: 120 nC, Part Status: Active, Current - Collector (Ic) (Max): 160 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 430 A, Power - Max: 625 W.

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IXXH80N65B4H1 IXXH80N65B4H1 IXYS Littelfuse_Discrete_IGBTs_XPT_IXXH80N65B4H1_Datasheet.PDF IGBTs 650V/160A TRENCH IGBT GENX4 XPT
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IXXH80N65B4H1 IXXH80N65B4H1 IXYS IXXH80N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 123ns
Turn-off time: 147ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
Produkt ist nicht verfügbar
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IXXH80N65B4H1 Littelfuse_Discrete_IGBTs_XPT_IXXH80N65B4H1_Datasheet.PDF
IXXH80N65B4H1
Hersteller: IXYS
IGBTs 650V/160A TRENCH IGBT GENX4 XPT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXXH80N65B4H1 IXXH80N65B4H1.pdf
IXXH80N65B4H1
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 625W
Case: TO247-3
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 123ns
Turn-off time: 147ns
Gate-emitter voltage: ±20V
Collector current: 80A
Pulsed collector current: 430A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH