IXXH80N65B4H1 IXYS
Hersteller: IXYS
Description: IGBT PT 650V 160A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/120ns
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
Description: IGBT PT 650V 160A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A
Supplier Device Package: TO-247AD (IXXH)
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/120ns
Switching Energy: 3.77mJ (on), 1.2mJ (off)
Test Condition: 400V, 80A, 3Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 430 A
Power - Max: 625 W
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 22.53 EUR |
| 30+ | 13.71 EUR |
| 120+ | 11.78 EUR |
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Technische Details IXXH80N65B4H1 IXYS
Description: IGBT PT 650V 160A TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 150 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A, Supplier Device Package: TO-247AD (IXXH), IGBT Type: PT, Td (on/off) @ 25°C: 38ns/120ns, Switching Energy: 3.77mJ (on), 1.2mJ (off), Test Condition: 400V, 80A, 3Ohm, 15V, Gate Charge: 120 nC, Part Status: Active, Current - Collector (Ic) (Max): 160 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 430 A, Power - Max: 625 W.
Weitere Produktangebote IXXH80N65B4H1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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IXXH80N65B4H1 | Hersteller : IXYS SEMICONDUCTOR |
 Description: IXYS SEMICONDUCTOR - IXXH80N65B4H1 - IGBT, 160 A, 1.65 V, 625 W, 650 V, TO-247AD, 3 Pin(s)tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 1.65V usEccn: EAR99 euEccn: NLR Verlustleistung: 625W Bauform - Transistor: TO-247AD Anzahl der Pins: 3Pin(s) Produktpalette: XPT GenX4 Kollektor-Emitter-Spannung, max.: 650V productTraceability: No Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 160A SVHC: No SVHC (12-Jan-2017) |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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IXXH80N65B4H1 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 650V 160A 625000mW 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXXH80N65B4H1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 625W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 430A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 123ns Turn-off time: 147ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXXH80N65B4H1 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 650V 160A 625W 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXXH80N65B4H1 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 650V 160A 625W 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
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IXXH80N65B4H1 | Hersteller : IXYS |
IGBTs 650V/160A TRENCH IGBT GENX4 XPT |
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IXXH80N65B4H1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3 Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 625W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 430A Mounting: THT Gate charge: 0.12µC Kind of package: tube Turn-on time: 123ns Turn-off time: 147ns |
Produkt ist nicht verfügbar |