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Technische Details IXXK200N65B4 IXYS
Description: IGBT 650V 370A 1150W TO264, Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube, Power - Max: 1150 W, Current - Collector Pulsed (Icm): 1000 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 370 A, Part Status: Active, Gate Charge: 553 nC, Test Condition: 400V, 100A, 1Ohm, 15V, Switching Energy: 4.4mJ (on), 2.2mJ (off), Td (on/off) @ 25°C: 62ns/245ns, IGBT Type: PT, Supplier Device Package: TO-264 (IXXK), Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ).
Weitere Produktangebote IXXK200N65B4
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IXXK200N65B4 | Hersteller : IXYS |
 Description: IGBT 650V 370A 1150W TO264Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Tube Power - Max: 1150 W Current - Collector Pulsed (Icm): 1000 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 370 A Part Status: Active Gate Charge: 553 nC Test Condition: 400V, 100A, 1Ohm, 15V Switching Energy: 4.4mJ (on), 2.2mJ (off) Td (on/off) @ 25°C: 62ns/245ns IGBT Type: PT Supplier Device Package: TO-264 (IXXK) Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) |
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