auf Bestellung 659 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 41.2 EUR |
| 10+ | 38 EUR |
| 25+ | 35.57 EUR |
| 100+ | 34.23 EUR |
| 250+ | 33.56 EUR |
| 500+ | 32.74 EUR |
| 1000+ | 29.6 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXXK200N65B4 IXYS
Description: IGBT 650V 370A 1150W TO264, Packaging: Tube, Package / Case: TO-264-3, TO-264AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A, Supplier Device Package: TO-264 (IXXK), IGBT Type: PT, Td (on/off) @ 25°C: 62ns/245ns, Switching Energy: 4.4mJ (on), 2.2mJ (off), Test Condition: 400V, 100A, 1Ohm, 15V, Gate Charge: 553 nC, Part Status: Active, Current - Collector (Ic) (Max): 370 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 1000 A, Power - Max: 1150 W.
Weitere Produktangebote IXXK200N65B4
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
IXXK200N65B4 | Hersteller : Littelfuse |
 Trans IGBT Chip N-CH 650V 370A 1150000mW 3-Pin(3+Tab) TO-264 |
Produkt ist nicht verfügbar |
|
 |
IXXK200N65B4 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; TO264 Mounting: THT Gate charge: 517nC Technology: GenX4™; Trench; XPT™ Pulsed collector current: 1kA Type of transistor: IGBT Turn-on time: 135ns Kind of package: tube Case: TO264 Turn-off time: 370ns Gate-emitter voltage: ±20V Collector current: 200A Collector-emitter voltage: 650V Power dissipation: 1.63kW Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
 |
IXXK200N65B4 | Hersteller : IXYS |
Description: IGBT 650V 370A 1150W TO264 Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 160A Supplier Device Package: TO-264 (IXXK) IGBT Type: PT Td (on/off) @ 25°C: 62ns/245ns Switching Energy: 4.4mJ (on), 2.2mJ (off) Test Condition: 400V, 100A, 1Ohm, 15V Gate Charge: 553 nC Part Status: Active Current - Collector (Ic) (Max): 370 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 1000 A Power - Max: 1150 W |
Produkt ist nicht verfügbar |
|
|
|
IXXK200N65B4 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 200A; 1.63kW; TO264 Mounting: THT Gate charge: 517nC Technology: GenX4™; Trench; XPT™ Pulsed collector current: 1kA Type of transistor: IGBT Turn-on time: 135ns Kind of package: tube Case: TO264 Turn-off time: 370ns Gate-emitter voltage: ±20V Collector current: 200A Collector-emitter voltage: 650V Power dissipation: 1.63kW |
Produkt ist nicht verfügbar |