auf Bestellung 311 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 44.70 EUR |
| 10+ | 36.13 EUR |
| 100+ | 32.16 EUR |
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Technische Details IXXN110N65B4H1 IXYS
Description: IGBT MOD 650V 215A 750W SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A, NTC Thermistor: No, Supplier Device Package: SOT-227B, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 215 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 750 W, Current - Collector Cutoff (Max): 50 µA, Input Capacitance (Cies) @ Vce: 3.65 nF @ 25 V.
Weitere Produktangebote IXXN110N65B4H1 nach Preis ab 28.60 EUR bis 45.64 EUR
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IXXN110N65B4H1 | Hersteller : IXYS |
 Description: IGBT MOD 650V 215A 750W SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 215 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 750 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 3.65 nF @ 25 V |
auf Bestellung 228 Stücke: Lieferzeit 10-14 Tag (e) |
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IXXN110N65B4H1 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 650V 200A 750000mW 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXXN110N65B4H1 | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B Technology: GenX4™; XPT™ Power dissipation: 750W Case: SOT227B Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Max. off-state voltage: 650V Gate-emitter voltage: ±20V Type of semiconductor module: IGBT Collector current: 110A Pulsed collector current: 650A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXXN110N65B4H1 | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B Technology: GenX4™; XPT™ Power dissipation: 750W Case: SOT227B Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Max. off-state voltage: 650V Gate-emitter voltage: ±20V Type of semiconductor module: IGBT Collector current: 110A Pulsed collector current: 650A |
Produkt ist nicht verfügbar |