IXXN110N65B4H1 IXYS
Hersteller: IXYSDescription: IGBT MOD 650V 215A 750W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 215 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 3.65 nF @ 25 V
auf Bestellung 212 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 44.6 EUR |
| 10+ | 32.68 EUR |
| 100+ | 27.96 EUR |
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Technische Details IXXN110N65B4H1 IXYS
Description: IGBT MOD 650V 215A 750W SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A, NTC Thermistor: No, Supplier Device Package: SOT-227B, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 215 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 750 W, Current - Collector Cutoff (Max): 50 µA, Input Capacitance (Cies) @ Vce: 3.65 nF @ 25 V.
Weitere Produktangebote IXXN110N65B4H1 nach Preis ab 29.73 EUR bis 45.41 EUR
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IXXN110N65B4H1 | Hersteller : IXYS |
IGBT Modules 650V/240A TRENCH IGBT GENX4 XPT |
auf Bestellung 256 Stücke: Lieferzeit 10-14 Tag (e) |
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IXXN110N65B4H1 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 650V 200A 750000mW 4-Pin SOT-227B |
Produkt ist nicht verfügbar |
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IXXN110N65B4H1 | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B Technology: GenX4™; XPT™ Power dissipation: 750W Case: SOT227B Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Max. off-state voltage: 650V Gate-emitter voltage: ±20V Type of semiconductor module: IGBT Collector current: 110A Pulsed collector current: 650A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXXN110N65B4H1 | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B Technology: GenX4™; XPT™ Power dissipation: 750W Case: SOT227B Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Max. off-state voltage: 650V Gate-emitter voltage: ±20V Type of semiconductor module: IGBT Collector current: 110A Pulsed collector current: 650A |
Produkt ist nicht verfügbar |