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Technische Details IXXN110N65C4H1 IXYS
Description: IGBT MOD 650V 210A 750W SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A, NTC Thermistor: No, Supplier Device Package: SOT-227B, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 210 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 750 W, Current - Collector Cutoff (Max): 50 µA, Input Capacitance (Cies) @ Vce: 3.69 nF @ 25 V.
Weitere Produktangebote IXXN110N65C4H1 nach Preis ab 32.85 EUR bis 53.63 EUR
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IXXN110N65C4H1 | Hersteller : IXYS |
 Description: IGBT MOD 650V 210A 750W SOT-227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Input: Standard Configuration: Single Operating Temperature: -55°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 110A NTC Thermistor: No Supplier Device Package: SOT-227B IGBT Type: PT Part Status: Active Current - Collector (Ic) (Max): 210 A Voltage - Collector Emitter Breakdown (Max): 650 V Power - Max: 750 W Current - Collector Cutoff (Max): 50 µA Input Capacitance (Cies) @ Vce: 3.69 nF @ 25 V |
auf Bestellung 577 Stücke: Lieferzeit 10-14 Tag (e) |
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