IXXN200N60B3 IXYS
Hersteller: IXYSDescription: IGBT MOD 600V 280A 940W SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227B
IGBT Type: PT
Part Status: Active
Current - Collector (Ic) (Max): 280 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 940 W
Current - Collector Cutoff (Max): 50 µA
Input Capacitance (Cies) @ Vce: 9.97 nF @ 25 V
auf Bestellung 304 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 60.53 EUR |
| 10+ | 53.78 EUR |
| 100+ | 47.04 EUR |
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Technische Details IXXN200N60B3 IXYS
Description: IGBT MOD 600V 280A 940W SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Input: Standard, Configuration: Single, Operating Temperature: -55°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A, NTC Thermistor: No, Supplier Device Package: SOT-227B, IGBT Type: PT, Part Status: Active, Current - Collector (Ic) (Max): 280 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Power - Max: 940 W, Current - Collector Cutoff (Max): 50 µA, Input Capacitance (Cies) @ Vce: 9.97 nF @ 25 V.
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IXXN200N60B3 | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 160A; SOT227B Pulsed collector current: 1kA Power dissipation: 940W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: GenX3™; XPT™ Case: SOT227B Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 160A Anzahl je Verpackung: 1 Stücke |
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IXXN200N60B3 | Hersteller : IXYS |
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IXXN200N60B3 | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 160A; SOT227B Pulsed collector current: 1kA Power dissipation: 940W Electrical mounting: screw Mechanical mounting: screw Type of module: IGBT Technology: GenX3™; XPT™ Case: SOT227B Max. off-state voltage: 0.6kV Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 160A |
Produkt ist nicht verfügbar |