auf Bestellung 530 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 40.74 EUR |
| 10+ | 36.2 EUR |
| 30+ | 33.79 EUR |
| 60+ | 32.72 EUR |
| 120+ | 32.63 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXXR110N65B4H1 IXYS
Description: IGBT 650V 150A 455W ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 100 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 110A, Supplier Device Package: ISOPLUS247™, IGBT Type: PT, Td (on/off) @ 25°C: 38ns/156ns, Switching Energy: 2.2mJ (on), 1.05mJ (off), Test Condition: 400V, 55A, 2Ohm, 15V, Gate Charge: 183 nC, Part Status: Active, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 460 A, Power - Max: 455 W.
Weitere Produktangebote IXXR110N65B4H1 nach Preis ab 41.03 EUR bis 41.03 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
|---|---|---|---|---|---|---|---|---|---|
.jpg "IXXR110N65B4H1") |
IXXR110N65B4H1 | Hersteller : IXYS |
 Description: IGBT 650V 150A 455W ISOPLUS247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 110A Supplier Device Package: ISOPLUS247™ IGBT Type: PT Td (on/off) @ 25°C: 38ns/156ns Switching Energy: 2.2mJ (on), 1.05mJ (off) Test Condition: 400V, 55A, 2Ohm, 15V Gate Charge: 183 nC Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 460 A Power - Max: 455 W |
auf Bestellung 28 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||
 |
IXXR110N65B4H1 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 650V 150A 455000mW 3-Pin(3+Tab) ISOPLUS 247 |
Produkt ist nicht verfügbar |
|||||
 |
IXXR110N65B4H1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™ Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 70A Power dissipation: 455W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 490A Mounting: THT Gate charge: 183nC Kind of package: tube Turn-on time: 65ns Turn-off time: 250ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||
|
|
IXXR110N65B4H1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™ Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Collector-emitter voltage: 650V Collector current: 70A Power dissipation: 455W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 490A Mounting: THT Gate charge: 183nC Kind of package: tube Turn-on time: 65ns Turn-off time: 250ns |
Produkt ist nicht verfügbar |