auf Bestellung 169 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 36.71 EUR |
| 10+ | 29.69 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXXR110N65B4H1 IXYS
Description: IGBT PT 650V 150A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 100 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 110A, Supplier Device Package: ISOPLUS247™, IGBT Type: PT, Td (on/off) @ 25°C: 38ns/156ns, Switching Energy: 2.2mJ (on), 1.05mJ (off), Test Condition: 400V, 55A, 2Ohm, 15V, Gate Charge: 183 nC, Part Status: Active, Current - Collector (Ic) (Max): 150 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 460 A, Power - Max: 455 W.
Weitere Produktangebote IXXR110N65B4H1 nach Preis ab 24.13 EUR bis 39.72 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXXR110N65B4H1 | Hersteller : IXYS |
 Description: IGBT PT 650V 150A ISOPLUS247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 110A Supplier Device Package: ISOPLUS247™ IGBT Type: PT Td (on/off) @ 25°C: 38ns/156ns Switching Energy: 2.2mJ (on), 1.05mJ (off) Test Condition: 400V, 55A, 2Ohm, 15V Gate Charge: 183 nC Part Status: Active Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 460 A Power - Max: 455 W |
auf Bestellung 377 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
IXXR110N65B4H1 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 650V 150A 455000mW 3-Pin(3+Tab) ISOPLUS 247 |
Produkt ist nicht verfügbar |
|||||||||
 |
IXXR110N65B4H1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™ Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Power dissipation: 455W Case: PLUS247™ Mounting: THT Kind of package: tube Collector current: 70A Gate-emitter voltage: ±20V Pulsed collector current: 490A Collector-emitter voltage: 650V Turn-off time: 250ns Gate charge: 183nC Turn-on time: 65ns |
Produkt ist nicht verfügbar |