IXXX100N60B3H1 IXYS
Hersteller: IXYSDescription: IGBT 600V 200A 695W TO247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/120ns
Switching Energy: 1.9mJ (on), 2mJ (off)
Test Condition: 360V, 70A, 2Ohm, 15V
Gate Charge: 143 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 440 A
Power - Max: 695 W
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Technische Details IXXX100N60B3H1 IXYS
Description: IGBT 600V 200A 695W TO247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 140 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A, Supplier Device Package: PLUS247™-3, IGBT Type: PT, Td (on/off) @ 25°C: 30ns/120ns, Switching Energy: 1.9mJ (on), 2mJ (off), Test Condition: 360V, 70A, 2Ohm, 15V, Gate Charge: 143 nC, Current - Collector (Ic) (Max): 200 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 440 A, Power - Max: 695 W.
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Preis |
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IXXX100N60B3H1 | Hersteller : IXYS |
IGBTs PLUS247 600V 100A DIODE |
Produkt ist nicht verfügbar |
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IXXX100N60B3H1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 100A; 695W; PLUS247™ Type of transistor: IGBT Power dissipation: 695W Case: PLUS247™ Mounting: THT Gate charge: 143nC Kind of package: tube Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 370A Collector-emitter voltage: 600V Technology: GenX3™; Planar; XPT™ Turn-on time: 92ns Turn-off time: 350ns |
Produkt ist nicht verfügbar |