IXXX110N65B4H1 IXYS
Hersteller: IXYSDescription: IGBT PT 650V 240A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 38ns/156ns
Switching Energy: 2.2mJ (on), 1.05mJ (off)
Test Condition: 400V, 55A, 2Ohm, 15V
Gate Charge: 183 nC
Part Status: Active
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 630 A
Power - Max: 880 W
auf Bestellung 297 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 32.19 EUR |
| 30+ | 20.35 EUR |
| 120+ | 18.52 EUR |
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Technische Details IXXX110N65B4H1 IXYS
Description: IGBT PT 650V 240A PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 100 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A, Supplier Device Package: PLUS247™-3, IGBT Type: PT, Td (on/off) @ 25°C: 38ns/156ns, Switching Energy: 2.2mJ (on), 1.05mJ (off), Test Condition: 400V, 55A, 2Ohm, 15V, Gate Charge: 183 nC, Part Status: Active, Current - Collector (Ic) (Max): 240 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 630 A, Power - Max: 880 W.
Weitere Produktangebote IXXX110N65B4H1 nach Preis ab 19.34 EUR bis 32.3 EUR
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IXXX110N65B4H1 | Hersteller : IXYS |
IGBTs 650V/240A TRENCH IGBT GENX4 XPT |
auf Bestellung 166 Stücke: Lieferzeit 10-14 Tag (e) |
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IXXX110N65B4H1 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 650V 250A 880000mW 3-Pin(3+Tab) PLUS 247 |
Produkt ist nicht verfügbar |
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IXXX110N65B4H1 | Hersteller : IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™ Type of transistor: IGBT Technology: GenX4™; Trench; XPT™ Power dissipation: 880W Case: PLUS247™ Mounting: THT Kind of package: tube Collector current: 110A Gate-emitter voltage: ±20V Pulsed collector current: 570A Collector-emitter voltage: 650V Turn-off time: 250ns Gate charge: 183nC Turn-on time: 65ns |
Produkt ist nicht verfügbar |

