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IXXX160N65B4

IXXX160N65B4 IXYS


media-3322883.pdf Hersteller: IXYS
IGBT Transistors 650V/310A TRENCH IGBT GENX4 XPT
auf Bestellung 331 Stücke:

Lieferzeit 10-14 Tag (e)
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Technische Details IXXX160N65B4 IXYS

Description: IGBT 650V 310A 940W PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A, Supplier Device Package: PLUS247™-3, IGBT Type: PT, Td (on/off) @ 25°C: 52ns/220ns, Switching Energy: 3.3mJ (on), 1.88mJ (off), Test Condition: 400V, 80A, 1Ohm, 15V, Gate Charge: 425 nC, Part Status: Active, Current - Collector (Ic) (Max): 310 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 860 A, Power - Max: 940 W.

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IXXX160N65B4 IXXX160N65B4 Hersteller : IXYS littelfuse_discrete_igbts_xpt_ixx_160n65b4_datasheet.pdf.pdf Description: IGBT 650V 310A 940W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 52ns/220ns
Switching Energy: 3.3mJ (on), 1.88mJ (off)
Test Condition: 400V, 80A, 1Ohm, 15V
Gate Charge: 425 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 860 A
Power - Max: 940 W
auf Bestellung 525 Stücke:
Lieferzeit 10-14 Tag (e)
IXXX160N65B4 IXXX160N65B4 Hersteller : Littelfuse littelfuse_discrete_igbts_xpt_ixx_160n65b4_datasheet.pdf.pdf Trans IGBT Chip N-CH 650V 310A 940000mW 3-Pin(3+Tab) PLUS 247
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IXXX160N65B4 IXXX160N65B4 Hersteller : IXYS IXXK(x)160N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXXX160N65B4 IXXX160N65B4 Hersteller : IXYS IXXK(x)160N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Collector-emitter voltage: 650V
Collector current: 160A
Power dissipation: 940W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 860A
Mounting: THT
Gate charge: 425nC
Kind of package: tube
Turn-on time: 93ns
Turn-off time: 380ns
Produkt ist nicht verfügbar