IXYA15N65C3D1 IXYS
Hersteller: IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO263
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Turn-on time: 36ns
Turn-off time: 102ns
Collector current: 15A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 227 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 3.37 EUR |
| 24+ | 3.05 EUR |
| 30+ | 2.42 EUR |
| 32+ | 2.29 EUR |
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Technische Details IXYA15N65C3D1 IXYS
Description: IGBT PT 650V 38A TO-263AA, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 20 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A, Supplier Device Package: TO-263AA, IGBT Type: PT, Td (on/off) @ 25°C: 15ns/68ns, Switching Energy: 270µJ (on), 230µJ (off), Test Condition: 400V, 15A, 20Ohm, 15V, Gate Charge: 19 nC, Part Status: Active, Current - Collector (Ic) (Max): 38 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 200 W.
Weitere Produktangebote IXYA15N65C3D1 nach Preis ab 2.29 EUR bis 3.37 EUR
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IXYA15N65C3D1 | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 15A; 200W; TO263 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 200W Case: TO263 Mounting: SMD Gate charge: 19nC Kind of package: tube Gate-emitter voltage: ±20V Pulsed collector current: 80A Collector-emitter voltage: 650V Turn-on time: 36ns Turn-off time: 102ns Collector current: 15A |
auf Bestellung 227 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYA15N65C3D1 | Hersteller : IXYS |
Description: IGBT PT 650V 38A TO-263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 20 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A Supplier Device Package: TO-263AA IGBT Type: PT Td (on/off) @ 25°C: 15ns/68ns Switching Energy: 270µJ (on), 230µJ (off) Test Condition: 400V, 15A, 20Ohm, 15V Gate Charge: 19 nC Part Status: Active Current - Collector (Ic) (Max): 38 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 80 A Power - Max: 200 W |
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IXYA15N65C3D1 | Hersteller : IXYS |
IGBTs Disc IGBT XPT-GenX3 TO-263D2 |
Produkt ist nicht verfügbar |