IXYA20N120C3HV IXYS
Hersteller: IXYS
Description: IGBT 1200V 40A TO-263HV
Power - Max: 278 W
Current - Collector Pulsed (Icm): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Part Status: Active
Gate Charge: 53 nC
Test Condition: 600V, 20A, 10Ohm, 15V
Switching Energy: 1.3mJ (on), 1mJ (off)
Td (on/off) @ 25°C: 20ns/90ns
Supplier Device Package: TO-263HV
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Reverse Recovery Time (trr): 29 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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Technische Details IXYA20N120C3HV IXYS
Description: IGBT 1200V 40A TO-263HV, Power - Max: 278 W, Current - Collector Pulsed (Icm): 96 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 40 A, Part Status: Active, Gate Charge: 53 nC, Test Condition: 600V, 20A, 10Ohm, 15V, Switching Energy: 1.3mJ (on), 1mJ (off), Td (on/off) @ 25°C: 20ns/90ns, Supplier Device Package: TO-263HV, Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A, Reverse Recovery Time (trr): 29 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Weitere Produktangebote IXYA20N120C3HV
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
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IXYA20N120C3HV | IXYS |
IGBTs TO263 1200V 20A XPT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IXYA20N120C3HV | IXYS |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2 Type of transistor: IGBT Technology: GenX3™; XPT™ Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 278W Case: TO263-2 Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: SMD Gate charge: 53nC Kind of package: tube Turn-on time: 60ns Turn-off time: 215ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXYA20N120C3HV |
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Hersteller: IXYS
IGBTs TO263 1200V 20A XPT
IGBTs TO263 1200V 20A XPT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYA20N120C3HV |
![]() |
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 215ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


