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IXYA20N120C3HV

IXYA20N120C3HV Littelfuse


littelfuse_discrete_igbts_xpt_ixy_20n120c3_datasheet.pdf.pdf Hersteller: Littelfuse
Trans IGBT Chip N-CH 1200V 40A 278000mW
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Technische Details IXYA20N120C3HV Littelfuse

Description: IGBT 1200V 40A TO-263HV, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 29 ns, Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A, Supplier Device Package: TO-263HV, Td (on/off) @ 25°C: 20ns/90ns, Switching Energy: 1.3mJ (on), 1mJ (off), Test Condition: 600V, 20A, 10Ohm, 15V, Gate Charge: 53 nC, Part Status: Active, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 96 A, Power - Max: 278 W.

Weitere Produktangebote IXYA20N120C3HV

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IXYA20N120C3HV IXYA20N120C3HV Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA262386AE78BF&compId=IXY_20N120C3_HV.pdf?ci_sign=69a66f2254c263ce93b6ce37d84ed69d8c442da0 Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 278W
Case: TO263-2
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-off time: 215ns
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 96A
Turn-on time: 60ns
Anzahl je Verpackung: 1 Stücke
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IXYA20N120C3HV IXYA20N120C3HV Hersteller : IXYS littelfuse-discrete-igbts-ixy-20n120c3-datasheet?assetguid=4b247f38-be7d-4c7b-8c1c-ca3a974d6ebe Description: IGBT 1200V 40A TO-263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Supplier Device Package: TO-263HV
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 1.3mJ (on), 1mJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 53 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 278 W
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IXYA20N120C3HV IXYA20N120C3HV Hersteller : IXYS media-3320567.pdf IGBTs TO263 1200V 20A XPT
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IXYA20N120C3HV IXYA20N120C3HV Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE992CA262386AE78BF&compId=IXY_20N120C3_HV.pdf?ci_sign=69a66f2254c263ce93b6ce37d84ed69d8c442da0 Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO263-2
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 278W
Case: TO263-2
Mounting: SMD
Gate charge: 53nC
Kind of package: tube
Turn-off time: 215ns
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 96A
Turn-on time: 60ns
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