IXYA20N65C3 IXYS
Hersteller: IXYSDescription: IGBT 650V 20A TO-263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-263AA
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 650µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 230 W
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Technische Details IXYA20N65C3 IXYS
Description: IGBT 650V 20A TO-263AA, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 34 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A, Supplier Device Package: TO-263AA, Td (on/off) @ 25°C: 19ns/80ns, Switching Energy: 430µJ (on), 650µJ (off), Test Condition: 400V, 20A, 20Ohm, 15V, Gate Charge: 30 nC, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 105 A, Power - Max: 230 W.
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IXYA20N65C3 | Hersteller : IXYS |
IGBTs TO263 650V 20A XPT |
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IXYA20N65C3 | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 230W Case: TO263 Mounting: SMD Kind of package: tube Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 105A Collector-emitter voltage: 650V Turn-on time: 51ns Gate charge: 30nC Turn-off time: 132ns |
Produkt ist nicht verfügbar |