IXYA20N65C3D1 IXYS
Hersteller: IXYSCategory: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 30nC
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-off time: 132ns
Turn-on time: 51ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 141 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 4.06 EUR |
| 20+ | 3.65 EUR |
| 23+ | 3.23 EUR |
| 50+ | 2.9 EUR |
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Technische Details IXYA20N65C3D1 IXYS
Description: IGBT 650V 50A TO-263AA, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 34 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A, Supplier Device Package: TO-263AA, Td (on/off) @ 25°C: 19ns/80ns, Switching Energy: 430µJ (on), 650µJ (off), Test Condition: 400V, 20A, 20Ohm, 15V, Gate Charge: 30 nC, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 105 A, Power - Max: 200 W.
Weitere Produktangebote IXYA20N65C3D1 nach Preis ab 2.9 EUR bis 4.06 EUR
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IXYA20N65C3D1 | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 200W Case: TO263 Mounting: SMD Kind of package: tube Gate charge: 30nC Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 105A Collector-emitter voltage: 650V Turn-off time: 132ns Turn-on time: 51ns |
auf Bestellung 141 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYA20N65C3D1 | Hersteller : IXYS |
Description: IGBT 650V 50A TO-263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-263AA Td (on/off) @ 25°C: 19ns/80ns Switching Energy: 430µJ (on), 650µJ (off) Test Condition: 400V, 20A, 20Ohm, 15V Gate Charge: 30 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 105 A Power - Max: 200 W |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYA20N65C3D1 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 650V 50A 200000mW 3-Pin(2+Tab) TO-263AA |
Produkt ist nicht verfügbar |
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IXYA20N65C3D1 | Hersteller : IXYS |
Description: IGBT 650V 50A TO-263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 34 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-263AA Td (on/off) @ 25°C: 19ns/80ns Switching Energy: 430µJ (on), 650µJ (off) Test Condition: 400V, 20A, 20Ohm, 15V Gate Charge: 30 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 105 A Power - Max: 200 W |
Produkt ist nicht verfügbar |
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IXYA20N65C3D1 | Hersteller : IXYS |
IGBTs Disc IGBT XPT-GenX3 TO-263D2 |
Produkt ist nicht verfügbar |