IXYH100N65A3 IXYS
Hersteller: IXYSDescription: IGBT 650V 240A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 64 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 24ns/174ns
Switching Energy: 3.15mJ (on), 2.2mJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 178 nC
Current - Collector (Ic) (Max): 240 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 470 W
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Technische Details IXYH100N65A3 IXYS
Description: IGBT 650V 240A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 64 ns, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A, Supplier Device Package: TO-247 (IXTH), Td (on/off) @ 25°C: 24ns/174ns, Switching Energy: 3.15mJ (on), 2.2mJ (off), Test Condition: 400V, 50A, 2Ohm, 15V, Gate Charge: 178 nC, Current - Collector (Ic) (Max): 240 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 480 A, Power - Max: 470 W.
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IXYH100N65A3 | Hersteller : IXYS |
IGBTs TO247 650V 100A GENX3 |
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IXYH100N65A3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 100A; 470W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 470W Case: TO247-3 Mounting: THT Gate charge: 178nC Kind of package: tube Turn-on time: 87ns Turn-off time: 459ns Gate-emitter voltage: ±20V Collector current: 100A Pulsed collector current: 480A Collector-emitter voltage: 650V |
Produkt ist nicht verfügbar |