IXYH100N65C3 Ixys Corporation
| Anzahl | Privatkunde |
|---|---|
| 10+ | 17.79 EUR |
| 30+ | 16.97 EUR |
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14-21 Tag (e)
Mindestmenge:
10 Stücke
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Technische Details IXYH100N65C3 Ixys Corporation
Description: IGBT PT 650V 200A TO-247, Power - Max: 830 W, Current - Collector Pulsed (Icm): 420 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 200 A, Part Status: Active, Gate Charge: 164 nC, Test Condition: 400V, 50A, 3Ohm, 15V, Switching Energy: 2.15mJ (on), 840µJ (off), Td (on/off) @ 25°C: 28ns/106ns, IGBT Type: PT, Supplier Device Package: TO-247 (IXTH), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IXYH100N65C3 nach Preis ab 17.49 EUR bis 32.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IXyH100N65C3 | IXYS |
Description: IGBT PT 650V 200A TO-247Power - Max: 830 W Current - Collector Pulsed (Icm): 420 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 200 A Part Status: Active Gate Charge: 164 nC Test Condition: 400V, 50A, 3Ohm, 15V Switching Energy: 2.15mJ (on), 840µJ (off) Td (on/off) @ 25°C: 28ns/106ns IGBT Type: PT Supplier Device Package: TO-247 (IXTH) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 461 Stücke: Lieferzeit 10-14 Tag (e) |
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IXyH100N65C3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3 Case: TO247-3 Technology: GenX3™; Planar; XPT™ Type of transistor: IGBT Kind of package: tube Mounting: THT Turn-on time: 62ns Gate charge: 172nC Turn-off time: 200ns Gate-emitter voltage: ±20V Power dissipation: 830W Collector current: 100A Pulsed collector current: 420A Collector-emitter voltage: 650V |
auf Bestellung 275 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXyH100N65C3 |
![]() |
Hersteller: IXYS
Description: IGBT PT 650V 200A TO-247
Power - Max: 830 W
Current - Collector Pulsed (Icm): 420 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 200 A
Part Status: Active
Gate Charge: 164 nC
Test Condition: 400V, 50A, 3Ohm, 15V
Switching Energy: 2.15mJ (on), 840µJ (off)
Td (on/off) @ 25°C: 28ns/106ns
IGBT Type: PT
Supplier Device Package: TO-247 (IXTH)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT PT 650V 200A TO-247
Power - Max: 830 W
Current - Collector Pulsed (Icm): 420 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 200 A
Part Status: Active
Gate Charge: 164 nC
Test Condition: 400V, 50A, 3Ohm, 15V
Switching Energy: 2.15mJ (on), 840µJ (off)
Td (on/off) @ 25°C: 28ns/106ns
IGBT Type: PT
Supplier Device Package: TO-247 (IXTH)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 461 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 32.68 EUR |
| 30+ | 20.22 EUR |
| 120+ | 17.49 EUR |
| IXyH100N65C3 |
![]() |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Turn-on time: 62ns
Gate charge: 172nC
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Power dissipation: 830W
Collector current: 100A
Pulsed collector current: 420A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Turn-on time: 62ns
Gate charge: 172nC
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Power dissipation: 830W
Collector current: 100A
Pulsed collector current: 420A
Collector-emitter voltage: 650V
auf Bestellung 275 Stücke:
Lieferzeit 14-21 Tag (e)




