IXyH100N65C3 IXYS
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Turn-on time: 62ns
Gate charge: 172nC
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 420A
Collector-emitter voltage: 650V
Power dissipation: 830W
| Anzahl | Preis |
|---|---|
| 5+ | 14.64 EUR |
| 6+ | 13.63 EUR |
| 10+ | 12.58 EUR |
| 30+ | 10.61 EUR |
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Technische Details IXyH100N65C3 IXYS
Description: IGBT PT 650V 200A TO-247, Power - Max: 830 W, Current - Collector Pulsed (Icm): 420 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 200 A, Part Status: Active, Gate Charge: 164 nC, Test Condition: 400V, 50A, 3Ohm, 15V, Switching Energy: 2.15mJ (on), 840µJ (off), Td (on/off) @ 25°C: 28ns/106ns, IGBT Type: PT, Supplier Device Package: TO-247 (IXTH), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IXyH100N65C3 nach Preis ab 12.04 EUR bis 22.79 EUR
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IXyH100N65C3 | Hersteller : IXYS |
Description: IGBT PT 650V 200A TO-247 Power - Max: 830 W Current - Collector Pulsed (Icm): 420 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 200 A Part Status: Active Gate Charge: 164 nC Test Condition: 400V, 50A, 3Ohm, 15V Switching Energy: 2.15mJ (on), 840µJ (off) Td (on/off) @ 25°C: 28ns/106ns IGBT Type: PT Supplier Device Package: TO-247 (IXTH) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 70A Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 462 Stücke: Lieferzeit 10-14 Tag (e) |
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