IXYH20N120C3 IXYS
Hersteller: IXYS
Description: IGBT 1200V 40A TO-247
Supplier Device Package: TO-247 (IXTH)
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 278 W
Current - Collector Pulsed (Icm): 96 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 40 A
Gate Charge: 53 nC
Test Condition: 600V, 20A, 10Ohm, 15V
Switching Energy: 1.3mJ (on), 500µJ (off)
Td (on/off) @ 25°C: 20ns/90ns
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Technische Details IXYH20N120C3 IXYS
Description: IGBT 1200V 40A TO-247, Supplier Device Package: TO-247 (IXTH), Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Power - Max: 278 W, Current - Collector Pulsed (Icm): 96 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 40 A, Gate Charge: 53 nC, Test Condition: 600V, 20A, 10Ohm, 15V, Switching Energy: 1.3mJ (on), 500µJ (off), Td (on/off) @ 25°C: 20ns/90ns.
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IXYH20N120C3 | IXYS |
IGBTs GenX3 1200V XPT IGBT |
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IXYH20N120C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 278W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: THT Gate charge: 53nC Kind of package: tube Turn-on time: 60ns Turn-off time: 0.22µs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXYH20N120C3 |
|
Hersteller: IXYS
IGBTs GenX3 1200V XPT IGBT
IGBTs GenX3 1200V XPT IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYH20N120C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 278W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 96A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 0.22µs
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH