Technische Details IXYH20N120C3 Littelfuse
Description: IGBT 1200V 40A 278W TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A, Supplier Device Package: TO-247 (IXTH), Td (on/off) @ 25°C: 20ns/90ns, Switching Energy: 1.3mJ (on), 500µJ (off), Test Condition: 600V, 20A, 10Ohm, 15V, Gate Charge: 53 nC, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 96 A, Power - Max: 278 W.
Weitere Produktangebote IXYH20N120C3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IXYH20N120C3 | Hersteller : Littelfuse |
 Trans IGBT Chip N-CH 1200V 40A 278W 3-Pin(3+Tab) TO-247AD |
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IXYH20N120C3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 278W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: THT Gate charge: 53nC Kind of package: tube Turn-on time: 60ns Turn-off time: 0.22µs Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXYH20N120C3 | Hersteller : IXYS |
Description: IGBT 1200V 40A 278W TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 20ns/90ns Switching Energy: 1.3mJ (on), 500µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 53 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 96 A Power - Max: 278 W |
Produkt ist nicht verfügbar |
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IXYH20N120C3 | Hersteller : IXYS |
IGBT Transistors GenX3 1200V XPT IGBT |
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IXYH20N120C3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 278W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 20A Power dissipation: 278W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 96A Mounting: THT Gate charge: 53nC Kind of package: tube Turn-on time: 60ns Turn-off time: 0.22µs |
Produkt ist nicht verfügbar |