auf Bestellung 224 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 21.89 EUR |
| 10+ | 19.29 EUR |
| 30+ | 17.58 EUR |
| 60+ | 17.14 EUR |
| 120+ | 16.46 EUR |
| 270+ | 16.39 EUR |
| 510+ | 15.42 EUR |
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Technische Details IXYH30N120C3D1 IXYS
Description: IGBT 1200V 66A 416W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 195 ns, Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 30A, Supplier Device Package: TO-247 (IXTH), Td (on/off) @ 25°C: 19ns/130ns, Switching Energy: 2.6mJ (on), 1.1mJ (off), Test Condition: 600V, 30A, 10Ohm, 15V, Gate Charge: 69 nC, Part Status: Active, Current - Collector (Ic) (Max): 66 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 133 A, Power - Max: 416 W.
Weitere Produktangebote IXYH30N120C3D1 nach Preis ab 16.8 EUR bis 22.05 EUR
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IXYH30N120C3D1 | Hersteller : IXYS |
 Description: IGBT 1200V 66A 416W TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 195 ns Vce(on) (Max) @ Vge, Ic: 3.3V @ 15V, 30A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 19ns/130ns Switching Energy: 2.6mJ (on), 1.1mJ (off) Test Condition: 600V, 30A, 10Ohm, 15V Gate Charge: 69 nC Part Status: Active Current - Collector (Ic) (Max): 66 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 133 A Power - Max: 416 W |
auf Bestellung 504 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYH30N120C3D1 | Hersteller : Littelfuse |
Trans IGBT Chip N-CH 1200V 66A 416000mW 3-Pin(3+Tab) TO-247AD |
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IXYH30N120C3D1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 416W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 133A Mounting: THT Gate charge: 69nC Kind of package: tube Turn-on time: 71ns Turn-off time: 296ns Anzahl je Verpackung: 300 Stücke |
Produkt ist nicht verfügbar |
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IXYH30N120C3D1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 30A Power dissipation: 416W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 133A Mounting: THT Gate charge: 69nC Kind of package: tube Turn-on time: 71ns Turn-off time: 296ns |
Produkt ist nicht verfügbar |