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IXYH40N65B3D1

IXYH40N65B3D1 IXYS


IXYH(Q)40N65B3D1.pdf Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 195A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 350ns
Anzahl je Verpackung: 1 Stücke
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Technische Details IXYH40N65B3D1 IXYS

Description: IGBT, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 37 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A, Supplier Device Package: TO-247 (IXTH), Td (on/off) @ 25°C: 20ns/140ns, Switching Energy: 800µJ (on), 1.25mJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 68 nC, Current - Collector (Ic) (Max): 86 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 195 A, Power - Max: 300 W.

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IXYH40N65B3D1 IXYH40N65B3D1 Hersteller : IXYS littelfuse_discrete_igbts_xpt_ixy_40n65b3d1_datasheet.pdf.pdf Description: IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/140ns
Switching Energy: 800µJ (on), 1.25mJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 68 nC
Current - Collector (Ic) (Max): 86 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 195 A
Power - Max: 300 W
Produkt ist nicht verfügbar
IXYH40N65B3D1 IXYH40N65B3D1 Hersteller : IXYS media-3323033.pdf IGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXYH40N65B3D1 IXYH40N65B3D1 Hersteller : IXYS IXYH(Q)40N65B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 195A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 350ns
Produkt ist nicht verfügbar