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IXYH50N120C3

IXYH50N120C3 IXYS


media-3322221.pdf Hersteller: IXYS
IGBT Transistors XPT IGBT C3-Class 1200V/105A
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Lieferzeit 374-378 Tag (e)
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1+18.44 EUR
10+ 16.24 EUR
30+ 14.48 EUR
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Technische Details IXYH50N120C3 IXYS

Description: IGBT 1200V 100A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 50A, Supplier Device Package: TO-247 (IXYH), Td (on/off) @ 25°C: 28ns/133ns, Switching Energy: 3mJ (on), 1mJ (off), Test Condition: 600V, 50A, 5Ohm, 15V, Gate Charge: 142 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 750 W.

Weitere Produktangebote IXYH50N120C3

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IXYH50N120C3 IXYH50N120C3 Hersteller : Littelfuse littelfuse_discrete_igbts_xpt_ixyh50n120c3_datasheet.pdf.pdf Trans IGBT Chip N-CH 1200V 100A 750000mW 3-Pin(3+Tab) TO-247AD
Produkt ist nicht verfügbar
IXYH50N120C3 IXYH50N120C3 Hersteller : IXYS IXYH50N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 96ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Kind of package: tube
Gate charge: 142nC
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Mounting: THT
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXYH50N120C3 IXYH50N120C3 Hersteller : IXYS littelfuse_discrete_igbts_xpt_ixyh50n120c3_datasheet.pdf.pdf Description: IGBT 1200V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 50A
Supplier Device Package: TO-247 (IXYH)
Td (on/off) @ 25°C: 28ns/133ns
Switching Energy: 3mJ (on), 1mJ (off)
Test Condition: 600V, 50A, 5Ohm, 15V
Gate Charge: 142 nC
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 750 W
Produkt ist nicht verfügbar
IXYH50N120C3 IXYH50N120C3 Hersteller : IXYS IXYH50N120C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 240A
Turn-on time: 96ns
Turn-off time: 0.22µs
Type of transistor: IGBT
Kind of package: tube
Gate charge: 142nC
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Mounting: THT
Case: TO247-3
Produkt ist nicht verfügbar