auf Bestellung 360 Stücke:
Lieferzeit 374-378 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 18.44 EUR |
10+ | 16.24 EUR |
30+ | 14.48 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXYH50N120C3 IXYS
Description: IGBT 1200V 100A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 50A, Supplier Device Package: TO-247 (IXYH), Td (on/off) @ 25°C: 28ns/133ns, Switching Energy: 3mJ (on), 1mJ (off), Test Condition: 600V, 50A, 5Ohm, 15V, Gate Charge: 142 nC, Part Status: Active, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 240 A, Power - Max: 750 W.
Weitere Produktangebote IXYH50N120C3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
IXYH50N120C3 | Hersteller : Littelfuse | Trans IGBT Chip N-CH 1200V 100A 750000mW 3-Pin(3+Tab) TO-247AD |
Produkt ist nicht verfügbar |
||
IXYH50N120C3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 240A Turn-on time: 96ns Turn-off time: 0.22µs Type of transistor: IGBT Kind of package: tube Gate charge: 142nC Technology: GenX3™; Planar; XPT™ Power dissipation: 750W Mounting: THT Case: TO247-3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||
IXYH50N120C3 | Hersteller : IXYS |
Description: IGBT 1200V 100A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 50A Supplier Device Package: TO-247 (IXYH) Td (on/off) @ 25°C: 28ns/133ns Switching Energy: 3mJ (on), 1mJ (off) Test Condition: 600V, 50A, 5Ohm, 15V Gate Charge: 142 nC Part Status: Active Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 240 A Power - Max: 750 W |
Produkt ist nicht verfügbar |
||
IXYH50N120C3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 50A; 750W; TO247-3 Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 240A Turn-on time: 96ns Turn-off time: 0.22µs Type of transistor: IGBT Kind of package: tube Gate charge: 142nC Technology: GenX3™; Planar; XPT™ Power dissipation: 750W Mounting: THT Case: TO247-3 |
Produkt ist nicht verfügbar |