IXYH50N65C3D1 Littelfuse
auf Bestellung 210 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 10.18 EUR |
| 16+ | 9.37 EUR |
| 25+ | 8.62 EUR |
| 50+ | 7.89 EUR |
| 100+ | 7.49 EUR |
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Technische Details IXYH50N65C3D1 Littelfuse
Description: IGBT 650V 132A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 36 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A, Supplier Device Package: TO-247 (IXTH), Td (on/off) @ 25°C: 20ns/90ns, Switching Energy: 800µJ (on), 800µJ (off), Test Condition: 400V, 36A, 5Ohm, 15V, Gate Charge: 86 nC, Current - Collector (Ic) (Max): 132 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 250 A, Power - Max: 600 W.
Weitere Produktangebote IXYH50N65C3D1 nach Preis ab 7.49 EUR bis 10.18 EUR
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IXYH50N65C3D1 | Hersteller : Littelfuse |
 Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 |
auf Bestellung 210 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYH50N65C3D1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 86nC Kind of package: tube Technology: GenX3™; Planar; XPT™ Turn-on time: 56ns Turn-off time: 145ns Anzahl je Verpackung: 1 Stücke |
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IXYH50N65C3D1 | Hersteller : IXYS |
Description: IGBT 650V 132A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 36 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A Supplier Device Package: TO-247 (IXTH) Td (on/off) @ 25°C: 20ns/90ns Switching Energy: 800µJ (on), 800µJ (off) Test Condition: 400V, 36A, 5Ohm, 15V Gate Charge: 86 nC Current - Collector (Ic) (Max): 132 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 250 A Power - Max: 600 W |
Produkt ist nicht verfügbar |
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IXYH50N65C3D1 | Hersteller : IXYS |
IGBTs Disc IGBT XPT-GenX3 TO-247AD |
Produkt ist nicht verfügbar |
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IXYH50N65C3D1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 86nC Kind of package: tube Technology: GenX3™; Planar; XPT™ Turn-on time: 56ns Turn-off time: 145ns |
Produkt ist nicht verfügbar |