IXYH50N65C3D1 IXYS
Hersteller: IXYS
Description: IGBT 650V 132A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A
Supplier Device Package: TO-247 (IXTH)
Td (on/off) @ 25°C: 20ns/90ns
Switching Energy: 800µJ (on), 800µJ (off)
Test Condition: 400V, 36A, 5Ohm, 15V
Gate Charge: 86 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 250 A
Power - Max: 600 W
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Technische Details IXYH50N65C3D1 IXYS
Description: IGBT 650V 132A TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 36 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 36A, Supplier Device Package: TO-247 (IXTH), Td (on/off) @ 25°C: 20ns/90ns, Switching Energy: 800µJ (on), 800µJ (off), Test Condition: 400V, 36A, 5Ohm, 15V, Gate Charge: 86 nC, Current - Collector (Ic) (Max): 132 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 250 A, Power - Max: 600 W.
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Verfügbarkeit |
Preis |
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IXYH50N65C3D1 | Hersteller : IXYS |
IGBTs Disc IGBT XPT-GenX3 TO-247AD |
Produkt ist nicht verfügbar |
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IXYH50N65C3D1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 600W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 250A Mounting: THT Gate charge: 86nC Kind of package: tube Turn-on time: 56ns Turn-off time: 145ns Technology: GenX3™; Planar; XPT™ |
Produkt ist nicht verfügbar |