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IXYH55N120B4H1

IXYH55N120B4H1 IXYS


media-3323821.pdf Hersteller: IXYS
IGBT Transistors IXYH55N120B4H1
auf Bestellung 72 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+17.71 EUR
10+ 15.19 EUR
30+ 13.76 EUR
120+ 12.64 EUR
270+ 11.9 EUR
510+ 11.14 EUR
1020+ 10.03 EUR
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Technische Details IXYH55N120B4H1 IXYS

Description: IGBT TRENCH 1200V 138A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 420 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A, Supplier Device Package: TO-247 (IXTH), IGBT Type: Trench, Td (on/off) @ 25°C: 27ns/215ns, Switching Energy: 3.4mJ (on), 2.75mJ (off), Test Condition: 600V, 40A, 5Ohm, 15V, Gate Charge: 120 nC, Current - Collector (Ic) (Max): 138 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 310 A, Power - Max: 650 W.

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IXYH55N120B4H1 Hersteller : IXYS media?resourcetype=datasheets&itemid=f5723d8e-1e4c-4755-bd3b-9f8cb86bfc6e&filename=power_semiconductor_discrete_igbt_ixyh55n120b4h1_datasheet.pdf Description: IGBT TRENCH 1200V 138A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 420 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/215ns
Switching Energy: 3.4mJ (on), 2.75mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 138 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 310 A
Power - Max: 650 W
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