Produkte > IXYS > IXYH55N120C4H1
IXYH55N120C4H1

IXYH55N120C4H1 IXYS


media-3320543.pdf Hersteller: IXYS
IGBT Transistors IXYH55N120C4H1
auf Bestellung 6 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+17.71 EUR
10+ 15.19 EUR
30+ 10.88 EUR
Produktrezensionen
Produktbewertung abgeben

Technische Details IXYH55N120C4H1 IXYS

Description: IGBT TRENCH 1200V 126A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 180 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 55A, Supplier Device Package: TO-247 (IXTH), IGBT Type: Trench, Td (on/off) @ 25°C: 20ns/180ns, Switching Energy: 3.5mJ (on), 1.34mJ (off), Test Condition: 600V, 40A, 5Ohm, 15V, Gate Charge: 114 nC, Current - Collector (Ic) (Max): 126 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 290 A, Power - Max: 650 W.

Weitere Produktangebote IXYH55N120C4H1

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IXYH55N120C4H1 Hersteller : IXYS media?resourcetype=datasheets&itemid=50f433fc-96b9-4ed1-8cb3-663cb80afb91&filename=power_semiconductor_discrete_igbt_ixyh55n120c4h1_datasheet.pdf Description: IGBT TRENCH 1200V 126A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 180 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 55A
Supplier Device Package: TO-247 (IXTH)
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/180ns
Switching Energy: 3.5mJ (on), 1.34mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 114 nC
Current - Collector (Ic) (Max): 126 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 290 A
Power - Max: 650 W
Produkt ist nicht verfügbar