Technische Details IXYJ20N120C3D1 Littelfuse
Description: IGBT 1200V 21A ISO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 195 ns, Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A, Supplier Device Package: ISO247, Td (on/off) @ 25°C: 20ns/90ns, Switching Energy: 1.3mJ (on), 500µJ (off), Test Condition: 600V, 20A, 10Ohm, 15V, Gate Charge: 53 nC, Part Status: Active, Current - Collector (Ic) (Max): 21 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 84 A, Power - Max: 105 W.
Weitere Produktangebote IXYJ20N120C3D1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IXYJ20N120C3D1 | Hersteller : IXYS |
 Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247 Type of transistor: IGBT Technology: GenX3™; XPT™ Power dissipation: 105W Case: TO247 Mounting: THT Gate charge: 53nC Kind of package: tube Turn-off time: 90ns Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 21A Pulsed collector current: 40A Turn-on time: 20ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXYJ20N120C3D1 | Hersteller : IXYS |
Description: IGBT 1200V 21A ISO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 195 ns Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A Supplier Device Package: ISO247 Td (on/off) @ 25°C: 20ns/90ns Switching Energy: 1.3mJ (on), 500µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 53 nC Part Status: Active Current - Collector (Ic) (Max): 21 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 84 A Power - Max: 105 W |
Produkt ist nicht verfügbar |
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IXYJ20N120C3D1 | Hersteller : IXYS |
IGBTs XPT 1200V IGBT GenX7 XPT IGBT |
Produkt ist nicht verfügbar |
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| IXYJ20N120C3D1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247 Type of transistor: IGBT Technology: GenX3™; XPT™ Power dissipation: 105W Case: TO247 Mounting: THT Gate charge: 53nC Kind of package: tube Turn-off time: 90ns Collector-emitter voltage: 1.2kV Gate-emitter voltage: ±20V Collector current: 21A Pulsed collector current: 40A Turn-on time: 20ns |
Produkt ist nicht verfügbar |