IXYJ20N120C3D1 IXYS
Hersteller: IXYS
Description: IGBT 1200V 21A ISO247
Switching Energy: 1.3mJ (on), 500µJ (off)
Td (on/off) @ 25°C: 20ns/90ns
Supplier Device Package: ISO247
Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A
Reverse Recovery Time (trr): 195 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 105 W
Current - Collector Pulsed (Icm): 84 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 21 A
Part Status: Active
Gate Charge: 53 nC
Test Condition: 600V, 20A, 10Ohm, 15V
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Technische Details IXYJ20N120C3D1 IXYS
Description: IGBT 1200V 21A ISO247, Switching Energy: 1.3mJ (on), 500µJ (off), Td (on/off) @ 25°C: 20ns/90ns, Supplier Device Package: ISO247, Vce(on) (Max) @ Vge, Ic: 3.4V @ 15V, 20A, Reverse Recovery Time (trr): 195 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Power - Max: 105 W, Current - Collector Pulsed (Icm): 84 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 21 A, Part Status: Active, Gate Charge: 53 nC, Test Condition: 600V, 20A, 10Ohm, 15V.
Weitere Produktangebote IXYJ20N120C3D1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IXYJ20N120C3D1 | IXYS |
IGBTs XPT 1200V IGBT GenX7 XPT IGBT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXYJ20N120C3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247 Type of transistor: IGBT Technology: GenX3™; XPT™ Collector-emitter voltage: 1.2kV Collector current: 21A Power dissipation: 105W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: THT Gate charge: 53nC Kind of package: tube Turn-on time: 20ns Turn-off time: 90ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXYJ20N120C3D1 |
|
Hersteller: IXYS
IGBTs XPT 1200V IGBT GenX7 XPT IGBT
IGBTs XPT 1200V IGBT GenX7 XPT IGBT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXYJ20N120C3D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 21A
Power dissipation: 105W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 20ns
Turn-off time: 90ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 21A; 105W; TO247
Type of transistor: IGBT
Technology: GenX3™; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 21A
Power dissipation: 105W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 53nC
Kind of package: tube
Turn-on time: 20ns
Turn-off time: 90ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH