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IXYN120N65C3D1

IXYN120N65C3D1 IXYS


media?resourcetype=datasheets&itemid=33e46005-0359-40c2-85c0-3100c2cc40b5&filename=littelfuse_discrete_igbts_xpt_ixyn120n65c3d1_datasheet.pdf Hersteller: IXYS
Description: IGBT PT 650V 190A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 29 ns
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A
Supplier Device Package: SOT-227B
IGBT Type: PT
Td (on/off) @ 25°C: 28ns/127ns
Switching Energy: 1.25mJ (on), 500µJ (off)
Test Condition: 400V, 50A, 2Ohm, 15V
Gate Charge: 265 nC
Current - Collector (Ic) (Max): 190 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 620 A
Power - Max: 830 W
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Technische Details IXYN120N65C3D1 IXYS

Description: IGBT PT 650V 190A SOT227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 29 ns, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 100A, Supplier Device Package: SOT-227B, IGBT Type: PT, Td (on/off) @ 25°C: 28ns/127ns, Switching Energy: 1.25mJ (on), 500µJ (off), Test Condition: 400V, 50A, 2Ohm, 15V, Gate Charge: 265 nC, Current - Collector (Ic) (Max): 190 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 620 A, Power - Max: 830 W.

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IXYN120N65C3D1 IXYN120N65C3D1 Hersteller : IXYS media-3320056.pdf IGBT Transistors Disc IGBT XPT-GenX3 SOT-227UI(mini
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