Produkte > IXYS > IXYN150N60B3
IXYN150N60B3

IXYN150N60B3 IXYS


media-3320068.pdf Hersteller: IXYS
IGBTs SOT227 600V 140A GENX3
auf Bestellung 255 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+41.87 EUR
10+34.97 EUR
100+30.59 EUR
500+30.24 EUR
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IXYN150N60B3 IXYS

Description: IGBT 600V 250A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 88 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A, Supplier Device Package: SOT-227B, Td (on/off) @ 25°C: 27ns/167ns, Switching Energy: 4.2mJ (on), 2.6mJ (off), Test Condition: 400V, 75A, 2Ohm, 15V, Gate Charge: 260 nC, Current - Collector (Ic) (Max): 250 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 750 A, Power - Max: 830 W.

Weitere Produktangebote IXYN150N60B3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXYN150N60B3 IXYN150N60B3 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB8C89CC895820&compId=IXYN150N60B3.pdf?ci_sign=2b81f77306a9a614cab35e665551c8d81a0f0fd4 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 140A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 830W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 750A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYN150N60B3 IXYN150N60B3 Hersteller : IXYS Description: IGBT 600V 250A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 88 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
Supplier Device Package: SOT-227B
Td (on/off) @ 25°C: 27ns/167ns
Switching Energy: 4.2mJ (on), 2.6mJ (off)
Test Condition: 400V, 75A, 2Ohm, 15V
Gate Charge: 260 nC
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 750 A
Power - Max: 830 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYN150N60B3 IXYN150N60B3 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99BFB8C89CC895820&compId=IXYN150N60B3.pdf?ci_sign=2b81f77306a9a614cab35e665551c8d81a0f0fd4 Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 140A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 830W
Case: SOT227B
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Collector current: 140A
Pulsed collector current: 750A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH