Technische Details IXYN150N60B3 IXYS
Description: IGBT 600V 250A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 88 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A, Supplier Device Package: SOT-227B, Td (on/off) @ 25°C: 27ns/167ns, Switching Energy: 4.2mJ (on), 2.6mJ (off), Test Condition: 400V, 75A, 2Ohm, 15V, Gate Charge: 260 nC, Current - Collector (Ic) (Max): 250 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 750 A, Power - Max: 830 W.
Weitere Produktangebote IXYN150N60B3 nach Preis ab 30.64 EUR bis 42.08 EUR
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IXYN150N60B3 | Hersteller : IXYS |
 Description: IGBT 600V 250A SOT-227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 88 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A Supplier Device Package: SOT-227B Td (on/off) @ 25°C: 27ns/167ns Switching Energy: 4.2mJ (on), 2.6mJ (off) Test Condition: 400V, 75A, 2Ohm, 15V Gate Charge: 260 nC Current - Collector (Ic) (Max): 250 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 750 A Power - Max: 830 W |
auf Bestellung 80 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYN150N60B3 | Hersteller : IXYS |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 140A; SOT227B Technology: GenX3™; XPT™ Power dissipation: 830W Case: SOT227B Pulsed collector current: 750A Max. off-state voltage: 0.6kV Type of semiconductor module: IGBT Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Gate-emitter voltage: ±20V Collector current: 140A |
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