auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.80 EUR |
| 10+ | 6.72 EUR |
| 50+ | 5.68 EUR |
| 100+ | 5.05 EUR |
| 500+ | 4.49 EUR |
| 1000+ | 3.84 EUR |
| 2500+ | 3.61 EUR |
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Technische Details IXYP10N65B3D1 IXYS
Description: IGBT PT 650V 32A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 29 ns, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A, Supplier Device Package: TO-220, IGBT Type: PT, Td (on/off) @ 25°C: 17ns/125ns, Switching Energy: 300µJ (on), 200µJ (off), Test Condition: 400V, 10A, 50Ohm, 15V, Gate Charge: 20 nC, Part Status: Active, Current - Collector (Ic) (Max): 32 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 62 A, Power - Max: 160 W.
Weitere Produktangebote IXYP10N65B3D1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IXYP10N65B3D1 | Hersteller : Littelfuse |
 XPTTM 650V IGBT GenX3TM w/Diode |
Produkt ist nicht verfügbar |
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IXYP10N65B3D1 | Hersteller : IXYS |
Description: IGBT PT 650V 32A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 29 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 10A Supplier Device Package: TO-220 IGBT Type: PT Td (on/off) @ 25°C: 17ns/125ns Switching Energy: 300µJ (on), 200µJ (off) Test Condition: 400V, 10A, 50Ohm, 15V Gate Charge: 20 nC Part Status: Active Current - Collector (Ic) (Max): 32 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 62 A Power - Max: 160 W |
Produkt ist nicht verfügbar |