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IXYP10N65C3

IXYP10N65C3 IXYS


pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE44886FEA55820&compId=IXYP10N65C3.pdf?ci_sign=4e0aa075c2a195cc2704f868d1af1be03e9c7e07 Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 54A
Turn-on time: 44ns
Turn-off time: 128ns
Gate charge: 18nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 10A
Anzahl je Verpackung: 1 Stücke
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Technische Details IXYP10N65C3 IXYS

Description: IGBT PT 650V 30A TO-220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A, Supplier Device Package: TO-220-3, IGBT Type: PT, Td (on/off) @ 25°C: 20ns/77ns, Switching Energy: 240µJ (on), 110µJ (off), Test Condition: 400V, 10A, 50Ohm, 15V, Gate Charge: 18 nC, Part Status: Active, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 54 A, Power - Max: 160 W.

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IXYP10N65C3 IXYP10N65C3 Hersteller : IXYS Description: IGBT PT 650V 30A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 20ns/77ns
Switching Energy: 240µJ (on), 110µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 160 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXYP10N65C3 IXYP10N65C3 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99CE44886FEA55820&compId=IXYP10N65C3.pdf?ci_sign=4e0aa075c2a195cc2704f868d1af1be03e9c7e07 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 10A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 54A
Turn-on time: 44ns
Turn-off time: 128ns
Gate charge: 18nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 10A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH