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IXYP10N65C3D1M

IXYP10N65C3D1M IXYS

IXYP10N65C3D1M.pdf Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 7A; 53W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 7A
Power dissipation: 53W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 128ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
23+3.13 EUR
26+ 2.83 EUR
32+ 2.25 EUR
34+ 2.13 EUR
Mindestbestellmenge: 23
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Technische Details IXYP10N65C3D1M IXYS

Description: IGBT 650V 15A TO220 ISOL TAB, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Isolated Tab, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 26 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A, Supplier Device Package: TO-220 Isolated Tab, Td (on/off) @ 25°C: 20ns/77ns, Switching Energy: 240µJ (on), 170µJ (off), Test Condition: 400V, 10A, 50Ohm, 15V, Gate Charge: 18 nC, Part Status: Active, Current - Collector (Ic) (Max): 15 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 50 A, Power - Max: 53 W.

Weitere Produktangebote IXYP10N65C3D1M nach Preis ab 2.13 EUR bis 3.13 EUR

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IXYP10N65C3D1M IXYP10N65C3D1M Hersteller : IXYS IXYP10N65C3D1M.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 7A; 53W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 7A
Power dissipation: 53W
Case: TO220FP
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Turn-on time: 44ns
Turn-off time: 128ns
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
23+3.13 EUR
26+ 2.83 EUR
32+ 2.25 EUR
34+ 2.13 EUR
Mindestbestellmenge: 23
IXYP10N65C3D1M IXYP10N65C3D1M Hersteller : IXYS littelfuse_discrete_igbts_xpt_ixyp10n65c3d1m_datasheet.pdf.pdf Description: IGBT 650V 15A TO220 ISOL TAB
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 26 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 10A
Supplier Device Package: TO-220 Isolated Tab
Td (on/off) @ 25°C: 20ns/77ns
Switching Energy: 240µJ (on), 170µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 18 nC
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 50 A
Power - Max: 53 W
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IXYP10N65C3D1M IXYP10N65C3D1M Hersteller : IXYS media-3320007.pdf IGBT Transistors Disc IGBT XPT-GenX3 TO-220AB/FP
Produkt ist nicht verfügbar