IXYP20N65B3D1 IXYS
Hersteller: IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Collector current: 20A
Pulsed collector current: 108A
Turn-on time: 39ns
Turn-off time: 271ns
Anzahl je Verpackung: 1 Stücke
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Technische Details IXYP20N65B3D1 IXYS
Description: IGBT PT 650V 58A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 25 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A, Supplier Device Package: TO-220, IGBT Type: PT, Td (on/off) @ 25°C: 12ns/103ns, Switching Energy: 500µJ (on), 450µJ (off), Test Condition: 400V, 20A, 20Ohm, 15V, Gate Charge: 29 nC, Part Status: Active, Current - Collector (Ic) (Max): 58 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 108 A, Power - Max: 230 W.
Weitere Produktangebote IXYP20N65B3D1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXYP20N65B3D1 | Hersteller : IXYS |
Description: IGBT PT 650V 58A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 25 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A Supplier Device Package: TO-220 IGBT Type: PT Td (on/off) @ 25°C: 12ns/103ns Switching Energy: 500µJ (on), 450µJ (off) Test Condition: 400V, 20A, 20Ohm, 15V Gate Charge: 29 nC Part Status: Active Current - Collector (Ic) (Max): 58 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 108 A Power - Max: 230 W |
Produkt ist nicht verfügbar |
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IXYP20N65B3D1 | Hersteller : IXYS |
IGBTs Disc IGBT XPT-GenX3 TO-220AB/FP |
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IXYP20N65B3D1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 230W Case: TO220-3 Mounting: THT Kind of package: tube Gate charge: 29nC Collector-emitter voltage: 650V Gate-emitter voltage: ±20V Collector current: 20A Pulsed collector current: 108A Turn-on time: 39ns Turn-off time: 271ns |
Produkt ist nicht verfügbar |