IXYP20N65B3D1 IXYS
Hersteller: IXYS
Description: IGBT PT 650V 58A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 25 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 12ns/103ns
Switching Energy: 500µJ (on), 450µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 29 nC
Part Status: Active
Current - Collector (Ic) (Max): 58 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 108 A
Power - Max: 230 W
Produktrezensionen
Produktbewertung abgeben
Technische Details IXYP20N65B3D1 IXYS
Description: IGBT PT 650V 58A TO-220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 25 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A, Supplier Device Package: TO-220, IGBT Type: PT, Td (on/off) @ 25°C: 12ns/103ns, Switching Energy: 500µJ (on), 450µJ (off), Test Condition: 400V, 20A, 20Ohm, 15V, Gate Charge: 29 nC, Part Status: Active, Current - Collector (Ic) (Max): 58 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 108 A, Power - Max: 230 W.
Weitere Produktangebote IXYP20N65B3D1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IXYP20N65B3D1 | IXYS |
IGBTs Disc IGBT XPT-GenX3 TO-220AB/FP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXYP20N65B3D1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 230W Case: TO220-3 Mounting: THT Kind of package: tube Collector-emitter voltage: 650V Turn-on time: 39ns Gate charge: 29nC Turn-off time: 271ns Collector current: 20A Gate-emitter voltage: ±20V Pulsed collector current: 108A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXYP20N65B3D1 |
|
Hersteller: IXYS
IGBTs Disc IGBT XPT-GenX3 TO-220AB/FP
IGBTs Disc IGBT XPT-GenX3 TO-220AB/FP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXYP20N65B3D1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 39ns
Gate charge: 29nC
Turn-off time: 271ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 650V
Turn-on time: 39ns
Gate charge: 29nC
Turn-off time: 271ns
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH