IXYP20N65C3 IXYS
Hersteller: IXYS
Description: DISC IGBT XPT-GENX3 TO-220AB/FP
Packaging: Tube
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 135 ns
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
Description: DISC IGBT XPT-GENX3 TO-220AB/FP
Packaging: Tube
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 135 ns
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 200 W
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Technische Details IXYP20N65C3 IXYS
Description: DISC IGBT XPT-GENX3 TO-220AB/FP, Packaging: Tube, Operating Temperature: -55°C ~ 175°C (TJ), Reverse Recovery Time (trr): 135 ns, Gate Charge: 30 nC, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 105 A, Power - Max: 200 W.
Weitere Produktangebote IXYP20N65C3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXYP20N65C3 | Hersteller : IXYS | IGBTs TO220 650V 20A GENX3 |
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| IXYP20N65C3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 50A; 200W; TO220AB Type of transistor: IGBT Power dissipation: 200W Case: TO220AB Mounting: THT Kind of package: tube Collector current: 50A Pulsed collector current: 105A Collector-emitter voltage: 650V Gate charge: 30nC |
Produkt ist nicht verfügbar |