IXYP20N65C3D1 IXYS
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 200W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Turn-on time: 51ns
Turn-off time: 132ns
auf Bestellung 209 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.79 EUR |
22+ | 3.39 EUR |
27+ | 2.72 EUR |
28+ | 2.57 EUR |
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Technische Details IXYP20N65C3D1 IXYS
Description: IGBT 650V 18A 50W TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 135 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A, Supplier Device Package: TO-220-3, IGBT Type: PT, Td (on/off) @ 25°C: 19ns/80ns, Switching Energy: 430µJ (on), 350µJ (off), Test Condition: 400V, 20A, 20Ohm, 15V, Gate Charge: 30 nC, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 105 A, Power - Max: 200 W.
Weitere Produktangebote IXYP20N65C3D1 nach Preis ab 2.57 EUR bis 5.97 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXYP20N65C3D1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 20A Power dissipation: 200W Case: TO220-3 Gate-emitter voltage: ±20V Pulsed collector current: 105A Mounting: THT Gate charge: 30nC Kind of package: tube Turn-on time: 51ns Turn-off time: 132ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 209 Stücke: Lieferzeit 7-14 Tag (e) |
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IXYP20N65C3D1 | Hersteller : IXYS | IGBT Transistors IGBT XPT-GENX3 |
auf Bestellung 1427 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYP20N65C3D1 | Hersteller : Littelfuse | Trans IGBT Chip N-CH 650V 50A 200000mW 3-Pin(3+Tab) TO-220AB |
auf Bestellung 190 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYP20N65C3D1 | Hersteller : LITTELFUSE |
Description: LITTELFUSE - IXYP20N65C3D1 - IGBT, 50 A, 2.27 V, 200 W, 650 V, TO-220AB, 3 Pin(s) tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES hazardous: false rohsPhthalatesCompliant: YES Kollektor-Emitter-Sättigungsspannung: 2.27V MSL: - usEccn: EAR99 euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: PW Series Kollektor-Emitter-Spannung, max.: 650V productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 175°C Kontinuierlicher Kollektorstrom: 50A SVHC: No SVHC (17-Jan-2022) |
auf Bestellung 590 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYP20N65C3D1 | Hersteller : Littelfuse | Trans IGBT Chip N-CH 650V 50A 200W 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IXYP20N65C3D1 | Hersteller : IXYS |
Description: IGBT 650V 18A 50W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 135 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 19ns/80ns Switching Energy: 430µJ (on), 350µJ (off) Test Condition: 400V, 20A, 20Ohm, 15V Gate Charge: 30 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 105 A Power - Max: 200 W |
Produkt ist nicht verfügbar |