IXYP20N65C3D1M IXYS
Hersteller: IXYSDescription: IGBT PT 650V 18A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-220-3
IGBT Type: PT
Td (on/off) @ 25°C: 19ns/80ns
Switching Energy: 430µJ (on), 350µJ (off)
Test Condition: 400V, 20A, 20Ohm, 15V
Gate Charge: 30 nC
Part Status: Active
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 50 W
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Technische Details IXYP20N65C3D1M IXYS
Description: IGBT PT 650V 18A TO-220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 30 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A, Supplier Device Package: TO-220-3, IGBT Type: PT, Td (on/off) @ 25°C: 19ns/80ns, Switching Energy: 430µJ (on), 350µJ (off), Test Condition: 400V, 20A, 20Ohm, 15V, Gate Charge: 30 nC, Part Status: Active, Current - Collector (Ic) (Max): 18 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 105 A, Power - Max: 50 W.
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IXYP20N65C3D1M | Hersteller : IXYS |
IGBTs 650V/18A XPT IGBT C3 Copacked TO-220 |
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IXYP20N65C3D1M | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 9A; 50W; TO220FP Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 50W Case: TO220FP Mounting: THT Kind of package: tube Collector-emitter voltage: 650V Turn-on time: 51ns Gate charge: 30nC Turn-off time: 132ns Collector current: 9A Gate-emitter voltage: ±20V Pulsed collector current: 105A |
Produkt ist nicht verfügbar |