Technische Details IXYP20N65C3D1M Littelfuse
Description: IGBT 650V 18A 50W TO220, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 30 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A, Supplier Device Package: TO-220-3, IGBT Type: PT, Td (on/off) @ 25°C: 19ns/80ns, Switching Energy: 430µJ (on), 350µJ (off), Test Condition: 400V, 20A, 20Ohm, 15V, Gate Charge: 30 nC, Part Status: Active, Current - Collector (Ic) (Max): 18 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 105 A, Power - Max: 50 W.
Weitere Produktangebote IXYP20N65C3D1M
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IXYP20N65C3D1M | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 9A; 50W; TO220FP Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 9A Power dissipation: 50W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 105A Mounting: THT Gate charge: 30nC Kind of package: tube Turn-on time: 51ns Turn-off time: 132ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXYP20N65C3D1M | Hersteller : IXYS |
Description: IGBT 650V 18A 50W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A Supplier Device Package: TO-220-3 IGBT Type: PT Td (on/off) @ 25°C: 19ns/80ns Switching Energy: 430µJ (on), 350µJ (off) Test Condition: 400V, 20A, 20Ohm, 15V Gate Charge: 30 nC Part Status: Active Current - Collector (Ic) (Max): 18 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 105 A Power - Max: 50 W |
Produkt ist nicht verfügbar |
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IXYP20N65C3D1M | Hersteller : IXYS | IGBT Transistors 650V/18A XPT IGBT C3 Copacked TO-220 |
Produkt ist nicht verfügbar |
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IXYP20N65C3D1M | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 9A; 50W; TO220FP Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 650V Collector current: 9A Power dissipation: 50W Case: TO220FP Gate-emitter voltage: ±20V Pulsed collector current: 105A Mounting: THT Gate charge: 30nC Kind of package: tube Turn-on time: 51ns Turn-off time: 132ns |
Produkt ist nicht verfügbar |