IXYP30N65C3 IXYS
Hersteller: IXYS
Description: DISC IGBT XPT-GENX3 TO-220AB/FP
Power - Max: 270 W
Current - Collector Pulsed (Icm): 118 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 44 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 1mJ (on), 270µJ (off)
Td (on/off) @ 25°C: 21ns/75ns
IGBT Type: PT
Supplier Device Package: TO-220
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Reverse Recovery Time (trr): 42 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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Technische Details IXYP30N65C3 IXYS
Description: DISC IGBT XPT-GENX3 TO-220AB/FP, Power - Max: 270 W, Current - Collector Pulsed (Icm): 118 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector (Ic) (Max): 60 A, Gate Charge: 44 nC, Test Condition: 400V, 30A, 10Ohm, 15V, Switching Energy: 1mJ (on), 270µJ (off), Td (on/off) @ 25°C: 21ns/75ns, IGBT Type: PT, Supplier Device Package: TO-220, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A, Reverse Recovery Time (trr): 42 ns, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote IXYP30N65C3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXYP30N65C3 | IXYS |
IGBTs TO220 650V 30A XPT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IXYP30N65C3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 270W Case: TO220-3 Mounting: THT Gate charge: 44nC Kind of package: tube Collector current: 30A Collector-emitter voltage: 650V Pulsed collector current: 118A Turn-on time: 59ns Turn-off time: 0.12µs Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXYP30N65C3 |
|
Hersteller: IXYS
IGBTs TO220 650V 30A XPT
IGBTs TO220 650V 30A XPT
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXYP30N65C3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Collector current: 30A
Collector-emitter voltage: 650V
Pulsed collector current: 118A
Turn-on time: 59ns
Turn-off time: 0.12µs
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH