IXYP30N65C3 IXYS
Hersteller: IXYSDescription: DISC IGBT XPT-GENX3 TO-220AB/FP
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
Supplier Device Package: TO-220
IGBT Type: PT
Td (on/off) @ 25°C: 21ns/75ns
Switching Energy: 1mJ (on), 270µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 44 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 118 A
Power - Max: 270 W
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Technische Details IXYP30N65C3 IXYS
Description: DISC IGBT XPT-GENX3 TO-220AB/FP, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 42 ns, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A, Supplier Device Package: TO-220, IGBT Type: PT, Td (on/off) @ 25°C: 21ns/75ns, Switching Energy: 1mJ (on), 270µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 44 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 118 A, Power - Max: 270 W.
Weitere Produktangebote IXYP30N65C3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXYP30N65C3 | Hersteller : IXYS |
IGBTs TO220 650V 30A XPT |
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IXYP30N65C3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 270W Case: TO220-3 Mounting: THT Gate charge: 44nC Kind of package: tube Collector-emitter voltage: 650V Turn-on time: 59ns Turn-off time: 0.12µs Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 118A |
Produkt ist nicht verfügbar |