IXYP30N65C3 IXYS
Hersteller: IXYSCategory: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO220-3
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector-emitter voltage: 650V
Turn-on time: 59ns
Turn-off time: 0.12µs
Pulsed collector current: 118A
Collector current: 30A
Anzahl je Verpackung: 1 Stücke
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Technische Details IXYP30N65C3 IXYS
Description: DISC IGBT XPT-GENX3 TO-220AB/FP, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 42 ns, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A, Supplier Device Package: TO-220, IGBT Type: PT, Td (on/off) @ 25°C: 21ns/75ns, Switching Energy: 1mJ (on), 270µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 44 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 118 A, Power - Max: 270 W.
Weitere Produktangebote IXYP30N65C3
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IXYP30N65C3 | Hersteller : IXYS |
Description: DISC IGBT XPT-GENX3 TO-220AB/FP Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A Supplier Device Package: TO-220 IGBT Type: PT Td (on/off) @ 25°C: 21ns/75ns Switching Energy: 1mJ (on), 270µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 44 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 118 A Power - Max: 270 W |
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IXYP30N65C3 | Hersteller : IXYS |
IGBTs TO220 650V 30A XPT |
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IXYP30N65C3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO220-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 270W Case: TO220-3 Mounting: THT Gate charge: 44nC Kind of package: tube Gate-emitter voltage: ±20V Collector-emitter voltage: 650V Turn-on time: 59ns Turn-off time: 0.12µs Pulsed collector current: 118A Collector current: 30A |
Produkt ist nicht verfügbar |