IXYT30N450HV IXYS
Hersteller: IXYSDescription: IGBT 4500V 60A TO-268HV
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A
Supplier Device Package: TO-268HV (IXYT)
Td (on/off) @ 25°C: 38ns/168ns
Test Condition: 960V, 30A, 10Ohm, 15V
Gate Charge: 88 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 430 W
auf Bestellung 582 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 73.74 EUR |
| 30+ | 51.44 EUR |
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Technische Details IXYT30N450HV IXYS
Description: IGBT 4500V 60A TO-268HV, Packaging: Tube, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 30A, Supplier Device Package: TO-268HV (IXYT), Td (on/off) @ 25°C: 38ns/168ns, Test Condition: 960V, 30A, 10Ohm, 15V, Gate Charge: 88 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 4500 V, Current - Collector Pulsed (Icm): 200 A, Power - Max: 430 W.
Weitere Produktangebote IXYT30N450HV nach Preis ab 67.28 EUR bis 80.12 EUR
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Category: SMD IGBT transistors Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV Case: TO268HV Mounting: SMD Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 88nC Turn-on time: 632ns Turn-off time: 1542ns Gate-emitter voltage: ±20V Collector current: 30A Power dissipation: 430W Pulsed collector current: 200A Collector-emitter voltage: 4.5kV Type of transistor: IGBT Technology: XPT™ Anzahl je Verpackung: 300 Stücke |
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IXYT30N450HV | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV Case: TO268HV Mounting: SMD Kind of package: tube Features of semiconductor devices: high voltage Gate charge: 88nC Turn-on time: 632ns Turn-off time: 1542ns Gate-emitter voltage: ±20V Collector current: 30A Power dissipation: 430W Pulsed collector current: 200A Collector-emitter voltage: 4.5kV Type of transistor: IGBT Technology: XPT™ |
Produkt ist nicht verfügbar |