Technische Details IXYT30N65C3H1HV IXYS
Category: SMD IGBT transistors, Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV, Type of transistor: IGBT, Technology: GenX3™; Planar; Sonic FRD™; XPT™, Power dissipation: 270W, Case: TO268HV, Mounting: SMD, Gate charge: 44nC, Kind of package: tube, Collector-emitter voltage: 650V, Turn-on time: 59ns, Turn-off time: 0.12µs, Gate-emitter voltage: ±20V, Collector current: 30A, Pulsed collector current: 118A.
Weitere Produktangebote IXYT30N65C3H1HV
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IXYT30N65C3H1HV | Hersteller : IXYS |
 IGBTs 650V/60A XPT Copacked TO-268HV |
Produkt ist nicht verfügbar |
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| IXYT30N65C3H1HV | Hersteller : IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 30A; 270W; TO268HV Type of transistor: IGBT Technology: GenX3™; Planar; Sonic FRD™; XPT™ Power dissipation: 270W Case: TO268HV Mounting: SMD Gate charge: 44nC Kind of package: tube Collector-emitter voltage: 650V Turn-on time: 59ns Turn-off time: 0.12µs Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 118A |
Produkt ist nicht verfügbar |