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IXYX100N120B3

IXYX100N120B3 IXYS


littelfuse_discrete_igbts_xpt_ixy_100n120b3_datasheet.pdf.pdf Hersteller: IXYS
Description: IGBT 1200V 188A 1150W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/153ns
Switching Energy: 7.7mJ (on), 7.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 530 A
Power - Max: 1150 W
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Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+40.09 EUR
10+ 35.63 EUR
100+ 31.16 EUR
500+ 26.59 EUR
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Technische Details IXYX100N120B3 IXYS

Description: IGBT 1200V 188A 1150W PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A, Supplier Device Package: PLUS247™-3, IGBT Type: PT, Td (on/off) @ 25°C: 30ns/153ns, Switching Energy: 7.7mJ (on), 7.1mJ (off), Test Condition: 600V, 100A, 1Ohm, 15V, Gate Charge: 250 nC, Part Status: Active, Current - Collector (Ic) (Max): 225 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 530 A, Power - Max: 1150 W.

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IXYX100N120B3 IXYX100N120B3 Hersteller : Littelfuse ittelfuse_discrete_igbts_xpt_ixy_100n120b3_datasheet.pdf.pdf Trans IGBT Chip N-CH 1200V 225A 1150000mW
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IXYX100N120B3 IXYX100N120B3 Hersteller : IXYS littelfuse_discrete_igbts_xpt_ixy_100n120b3_datasheet.pdf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 530A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 450ns
Produkt ist nicht verfügbar
IXYX100N120B3 IXYX100N120B3 Hersteller : IXYS ixyss08968_1-2272247.pdf IGBT Transistors IGBT XPT-GENX3
Produkt ist nicht verfügbar
IXYX100N120B3 IXYX100N120B3 Hersteller : IXYS littelfuse_discrete_igbts_xpt_ixy_100n120b3_datasheet.pdf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Collector-emitter voltage: 1.2kV
Collector current: 100A
Power dissipation: 1.15kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 530A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 125ns
Turn-off time: 450ns
Produkt ist nicht verfügbar