IXYX100N120B3 IXYS
Hersteller: IXYSDescription: IGBT PT 1200V 225A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 30ns/153ns
Switching Energy: 7.7mJ (on), 7.1mJ (off)
Test Condition: 600V, 100A, 1Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 225 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 530 A
Power - Max: 1150 W
auf Bestellung 410 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 31.01 EUR |
| 30+ | 21.67 EUR |
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Technische Details IXYX100N120B3 IXYS
Description: IGBT PT 1200V 225A PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 100A, Supplier Device Package: PLUS247™-3, IGBT Type: PT, Td (on/off) @ 25°C: 30ns/153ns, Switching Energy: 7.7mJ (on), 7.1mJ (off), Test Condition: 600V, 100A, 1Ohm, 15V, Gate Charge: 250 nC, Part Status: Active, Current - Collector (Ic) (Max): 225 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 530 A, Power - Max: 1150 W.
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Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 100A Power dissipation: 1.15kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 530A Mounting: THT Gate charge: 250nC Kind of package: tube Turn-on time: 125ns Turn-off time: 450ns |
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