auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 42.22 EUR |
| 10+ | 38.19 EUR |
| 30+ | 36.68 EUR |
| 120+ | 32.3 EUR |
| 510+ | 30.34 EUR |
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Technische Details IXYX100N120C3 IXYS
Description: IGBT 1200V 188A 1150W PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A, Supplier Device Package: PLUS247™-3, Td (on/off) @ 25°C: 32ns/123ns, Switching Energy: 6.5mJ (on), 2.9mJ (off), Test Condition: 600V, 100A, 1Ohm, 15V, Gate Charge: 270 nC, Part Status: Active, Current - Collector (Ic) (Max): 188 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 490 A, Power - Max: 1150 W.
Weitere Produktangebote IXYX100N120C3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXYX100N120C3 | Hersteller : Littelfuse |
 Trans IGBT Chip N-CH 1200V 188A 1150000mW 3-Pin(3+Tab) PLUS 247 |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYX100N120C3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 100A Power dissipation: 1.15kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 490A Mounting: THT Gate charge: 260C Kind of package: tube Turn-on time: 143ns Turn-off time: 271ns |
Produkt ist nicht verfügbar |
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IXYX100N120C3 | Hersteller : IXYS |
Description: IGBT 1200V 188A 1150W PLUS247 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 100A Supplier Device Package: PLUS247™-3 Td (on/off) @ 25°C: 32ns/123ns Switching Energy: 6.5mJ (on), 2.9mJ (off) Test Condition: 600V, 100A, 1Ohm, 15V Gate Charge: 270 nC Part Status: Active Current - Collector (Ic) (Max): 188 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 490 A Power - Max: 1150 W |
Produkt ist nicht verfügbar |
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IXYX100N120C3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 100A; 1.15kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Collector-emitter voltage: 1.2kV Collector current: 100A Power dissipation: 1.15kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 490A Mounting: THT Gate charge: 260C Kind of package: tube Turn-on time: 143ns Turn-off time: 271ns |
Produkt ist nicht verfügbar |