Produkte > IXYS > IXYX110N120C4
IXYX110N120C4

IXYX110N120C4 IXYS

media-3322243.pdf Hersteller: IXYS
IGBT Transistors XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT PLUS247
auf Bestellung 228 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+33.81 EUR
10+ 29.81 EUR
30+ 29 EUR
60+ 27.37 EUR
120+ 25.77 EUR
270+ 24.62 EUR
510+ 22.97 EUR
Produktrezensionen
Produktbewertung abgeben

Technische Details IXYX110N120C4 IXYS

Description: IGBT 1200V 110A GEN4 XPT PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 48 ns, Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A, Supplier Device Package: PLUS247™-3, Td (on/off) @ 25°C: 40ns/320ns, Switching Energy: 3.6mJ (on), 1.9mJ (off), Test Condition: 600V, 50A, 2Ohm, 15V, Gate Charge: 330 nC, Part Status: Active, Current - Collector (Ic) (Max): 310 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 740 A, Power - Max: 1360 W.

Weitere Produktangebote IXYX110N120C4

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IXYX110N120C4 Hersteller : Littelfuse media.pdf XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT PLUS247
Produkt ist nicht verfügbar
IXYX110N120C4 IXYX110N120C4 Hersteller : IXYS media?resourcetype=datasheets&itemid=279dcdf7-81ba-4f58-b4fc-0c0f9a28c0c9&filename=littelfuse-discrete-igbts-xpt-ixyx110n120c4-datasheet Description: IGBT 1200V 110A GEN4 XPT PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 110A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 40ns/320ns
Switching Energy: 3.6mJ (on), 1.9mJ (off)
Test Condition: 600V, 50A, 2Ohm, 15V
Gate Charge: 330 nC
Part Status: Active
Current - Collector (Ic) (Max): 310 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 740 A
Power - Max: 1360 W
Produkt ist nicht verfügbar