IXYX200N65B3 IXYS
Hersteller: IXYSDescription: IGBT 650V 410A PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 108 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A
Supplier Device Package: PLUS247™-3
Td (on/off) @ 25°C: 60ns/370ns
Switching Energy: 5mJ (on), 4mJ (off)
Test Condition: 400V, 100A, 0Ohm, 15V
Gate Charge: 340 nC
Current - Collector (Ic) (Max): 410 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 1100 A
Power - Max: 1560 W
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Technische Details IXYX200N65B3 IXYS
Description: IGBT 650V 410A PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 108 ns, Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 100A, Supplier Device Package: PLUS247™-3, Td (on/off) @ 25°C: 60ns/370ns, Switching Energy: 5mJ (on), 4mJ (off), Test Condition: 400V, 100A, 0Ohm, 15V, Gate Charge: 340 nC, Current - Collector (Ic) (Max): 410 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 1100 A, Power - Max: 1560 W.
Weitere Produktangebote IXYX200N65B3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IXYX200N65B3 | Hersteller : IXYS |
IGBTs PLUS247 650V 200A GENX3 |
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IXYX200N65B3 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 650V; 200A; 1.56kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; XPT™ Collector-emitter voltage: 650V Collector current: 200A Power dissipation: 1.56kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 1.1kA Mounting: THT Gate charge: 340nC Kind of package: tube Turn-on time: 170ns Turn-off time: 700ns |
Produkt ist nicht verfügbar |