Technische Details IXYX200N65B5 IXYS
Description: IGBT TRENCH FS 650V 470A PLUS247, Packaging: Bulk, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 100A, Supplier Device Package: PLUS247™-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 77ns/470ns, Switching Energy: 600µJ (on), 3.4mJ (off), Test Condition: 300V, 100A, 1Ohm, 15V, Gate Charge: 790 nC, Current - Collector (Ic) (Max): 470 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 1.13 kA, Power - Max: 1.61 kW.
Weitere Produktangebote IXYX200N65B5 nach Preis ab 23.81 EUR bis 41.64 EUR
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IXYX200N65B5 | Hersteller : IXYS |
 Description: IGBT TRENCH FS 650V 470A PLUS247Packaging: Bulk Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.45V @ 15V, 100A Supplier Device Package: PLUS247™-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 77ns/470ns Switching Energy: 600µJ (on), 3.4mJ (off) Test Condition: 300V, 100A, 1Ohm, 15V Gate Charge: 790 nC Current - Collector (Ic) (Max): 470 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 1.13 kA Power - Max: 1.61 kW |
auf Bestellung 270 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXYX200N65B5 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 200A; 1.61kW; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 200A Power dissipation: 1.61kW Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 1.13kA Mounting: THT Kind of package: tube |
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