JAN1N3600 Microchip / Microsemi
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 6.35 EUR |
| 10+ | 6.34 EUR |
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Technische Details JAN1N3600 Microchip / Microsemi
Description: DIODE GEN PURP 50V 200MA DO7, Packaging: Bulk, Package / Case: DO-204AA, DO-7, Axial, Mounting Type: Through Hole, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Current - Average Rectified (Io): 200mA, Supplier Device Package: DO-7, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA, Current - Reverse Leakage @ Vr: 100 nA @ 50 V, Grade: Military, Qualification: MIL-PRF-19500/231.
Weitere Produktangebote JAN1N3600
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| JAN1N3600 | Hersteller : Microsemi |
 Rectifier Diode Switching 50V 0.2A 4ns 2-Pin DO-7 Bag |
Produkt ist nicht verfügbar |
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JAN1N3600 | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 50V 200MA DO7 Packaging: Bulk Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: DO-7 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Grade: Military Qualification: MIL-PRF-19500/231 |
Produkt ist nicht verfügbar |