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Technische Details JAN1N4248 Microchip / Microsemi
Description: DIODE GEN PURP 800V 1A AXIAL, Current - Reverse Leakage @ Vr: 1 µA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 800 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: A, Axial, Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 5 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: A, Axial, Packaging: Bulk, Qualification: MIL-PRF-19500/286, Grade: Military.
Weitere Produktangebote JAN1N4248
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JAN1N4248 | Hersteller : Microchip Technology |
 Description: DIODE GEN PURP 800V 1A AXIALCurrent - Reverse Leakage @ Vr: 1 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Voltage - DC Reverse (Vr) (Max): 800 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: A, Axial Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 5 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: A, Axial Packaging: Bulk Qualification: MIL-PRF-19500/286 Grade: Military |
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