auf Bestellung 45 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 11.88 EUR |
| 100+ | 11.02 EUR |
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Technische Details JAN1N4248 Microchip / Microsemi
Description: DIODE GEN PURP 800V 1A AXIAL, Packaging: Bulk, Package / Case: A, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 5 µs, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: A, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A, Current - Reverse Leakage @ Vr: 1 µA @ 800 V, Qualification: MIL-PRF-19500/286.
Weitere Produktangebote JAN1N4248
| Foto | Bezeichnung | Hersteller | Beschreibung |
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JAN1N4248 | Hersteller : Microchip Technology |
 Description: DIODE GEN PURP 800V 1A AXIALPackaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V Qualification: MIL-PRF-19500/286 |
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