JAN1N4454-1 Microchip / Microsemi
auf Bestellung 1090 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.36 EUR |
| 25+ | 1.35 EUR |
| 100+ | 1.26 EUR |
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Technische Details JAN1N4454-1 Microchip / Microsemi
Description: DIODE GEN PURP 50V 200MA DO35, Packaging: Bulk, Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Current - Average Rectified (Io): 200mA, Supplier Device Package: DO-204AH (DO-35), Operating Temperature - Junction: -55°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA, Current - Reverse Leakage @ Vr: 100 nA @ 50 V, Qualification: MIL-PRF-19500/144.
Weitere Produktangebote JAN1N4454-1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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JAN1N4454-1 | Hersteller : Microchip Technology |
 Rectifier Diode Switching 50V 0.2A 4ns 2-Pin DO-35 Bag |
Produkt ist nicht verfügbar |
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JAN1N4454-1 | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 50V 200MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -55°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Qualification: MIL-PRF-19500/144 |
Produkt ist nicht verfügbar |