JAN1N5552/TR Microchip Technology

Description: DIODE GEN PURP 600V 3A, Packaging: Tape & Reel (TR), Package / Case: B, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: B, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A, Current - Reverse Leakage @ Vr: 1 µA @ 600 V, Qualification: MIL-PRF-19500/420.