auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 12.87 EUR |
| 100+ | 11.97 EUR |
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Technische Details JAN1N5615US Microchip / Microsemi
Description: DIODE GEN PURP 200V 1A D-5A, Packaging: Bulk, Package / Case: SQ-MELF, A, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 150 ns, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: D-5A, Operating Temperature - Junction: -65°C ~ 200°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A, Current - Reverse Leakage @ Vr: 500 µA @ 200 V, Grade: Military, Qualification: MIL-PRF-19500/429.
Weitere Produktangebote JAN1N5615US
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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JAN1N5615US | Hersteller : Microchip Technology |
 Rectifier Diode Switching 200V 1A 150ns 2-Pin A-MELF Bag |
Produkt ist nicht verfügbar |
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JAN1N5615US | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 200V 1A D-5A Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 200 V Grade: Military Qualification: MIL-PRF-19500/429 |
Produkt ist nicht verfügbar |