Technische Details JAN1N5618 MICROSEMI
Description: DIODE GEN PURP 600V 1A AXIAL, Packaging: Bulk, Package / Case: A, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: A, Axial, Operating Temperature - Junction: -65°C ~ 200°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A, Current - Reverse Leakage @ Vr: 500 nA @ 600 V, Qualification: MIL-PRF-19500/427.
Weitere Produktangebote JAN1N5618
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| JAN1N5618 | Hersteller : Semtech |
 TO204/1 A, 600 V, SILICON, SIGNAL DIODE POWER DISCR 1N5618Anzahl je Verpackung: 1 Stücke |
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JAN1N5618 | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 600V 1A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 200°C Grade: Military Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 600 V Qualification: MIL-PRF-19500/427 |
Produkt ist nicht verfügbar |
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| JAN1N5618 | Hersteller : Semtech Corporation |
Description: D MET 1A STD 600V Packaging: Bulk |
Produkt ist nicht verfügbar |
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JAN1N5618 | Hersteller : Microchip / Microsemi |
Rectifiers 600V 1A Std Rectifier THT |
Produkt ist nicht verfügbar |