JAN1N5618US MICROSEMI
Hersteller: MICROSEMI
A/VOIDLESS HERMETICALLY SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIF 1N5618
Anzahl je Verpackung: 1 Stücke
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Technische Details JAN1N5618US MICROSEMI
Description: DIODE GEN PURP 600V 1A D-5A, Qualification: MIL-PRF-19500/429, Current - Reverse Leakage @ Vr: 500 nA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 600 V, Grade: Military, Operating Temperature - Junction: -65°C ~ 200°C, Supplier Device Package: D-5A, Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 2 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SQ-MELF, A, Packaging: Bulk.
Weitere Produktangebote JAN1N5618US
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
JAN1N5618US | Microchip Technology |
Description: DIODE GEN PURP 600V 1A D-5A Qualification: MIL-PRF-19500/429 Current - Reverse Leakage @ Vr: 500 nA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Voltage - DC Reverse (Vr) (Max): 600 V Grade: Military Operating Temperature - Junction: -65°C ~ 200°C Supplier Device Package: D-5A Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SQ-MELF, A Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| JAN1N5618US |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 1A D-5A
Qualification: MIL-PRF-19500/429
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Description: DIODE GEN PURP 600V 1A D-5A
Qualification: MIL-PRF-19500/429
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH