Technische Details JAN1N5804US Semtech
Description: DIODE GEN PURP 100V 2.5A D-5A, Packaging: Bulk, Package / Case: SQ-MELF, A, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Capacitance @ Vr, F: 25pF @ 10V, 1MHz, Current - Average Rectified (Io): 2.5A, Supplier Device Package: D-5A, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A, Current - Reverse Leakage @ Vr: 1 µA @ 100 V, Qualification: MIL-PRF-19500/477.
Weitere Produktangebote JAN1N5804US
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JAN1N5804US | Hersteller : Microchip Technology |
 Description: DIODE GEN PURP 100V 2.5A D-5APackaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 2.5A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V Qualification: MIL-PRF-19500/477 |
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| JAN1N5804US | Hersteller : Semtech Corporation |
Description: DIODE 1A 100V TRR 25NS Packaging: Bulk |
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JAN1N5804US | Hersteller : Semtech |
ESD Suppressors / TVS Diodes DIODE 1A 100V TRR 25NS |
Produkt ist nicht verfügbar |